Solution-processed semiconductor lasers promise lightweight, wearable and scalable optoelectronic applications. Among the gain media for solution-processed lasers, metal halide perovskites stand out as an exceptional class because of their ability to achieve wavelength-adjustable, low-threshold lasing under optical pumping^1–8. Despite the progress in this field, electrically driven lasing from perovskite semiconductors remains a critical challenge. Here we demonstrate an electrically driven perovskite laser, constructed by vertically integrating a low-threshold single-crystal perovskite microcavity sub-unit with a high-power microcavity perovskite LED (PeLED) sub-unit. Under pulsed electrical excitation, the dual-cavity perovskite device shows a minimum lasing threshold of 92 A cm⁻² (average threshold: 129 A cm⁻², at about 22 °C, in air), which is an order of magnitude lower than that of state-of-the-art electrically driven organic lasers^9,10. Key to this demonstration is the integrated dual-cavity device architecture, which allows the microcavity PeLED sub-unit to deliver directional emission into the single-crystal perovskite microcavity sub-unit (at a coupling efficiency of about 82.7%) to establish the lasing action. An operational half-life (T ₅₀) of 1.8 h (6.4 × 10⁴ voltage pulses at 10 Hz) is achieved, outperforming the stability of electrically pumped organic lasers^9,10. The dual-cavity perovskite laser can be rapidly modulated at a bandwidth of 36.2 MHz, indicating its potential for data transmission and computational applications.

Solution-processed semiconductor lasers are next-generation light sources for large-scale, bio-compatible and integrated photonics. However, overcoming their performance-cost trade-off to rival III-V laser functionalities is a long-standing challenge. Here, we demonstrate room-temperature continuous-wave perovskite polariton lasers exhibiting remarkably low thresholds of ~0.4 W cm ⁻² , enabled by a variable single-crystal perovskite microcavity. The threshold outperforms state-of-the-art III-V lasers by ~30 times under optical pumping, and is exceptional among solution-processed lasers. The ultralow-threshold lasing arises from steady-state exciton-polariton condensation, a macroscopic quantum phenomenon akin to Bose-Einstein condensation. The steady-state condensation is attained by fine-tuning the cavity photon-exciton energy separation near the degeneracy point for strong light-matter interactions. These mechanisms enabled the initial demonstration of an indirectly injected perovskite laser chip powered by a gallium nitride light-emitting diode. Our findings create exciting avenues toward on-chip integration of solution-processed lasers, opening opportunities for lasing with ultralow energy consumption and unprecedented performance.