This study demonstrates the fabrication and characterization of chicken egg albumen-based bio-memristors. By introducing egg albumen as an insulator to fabricate memristor devices comprising a metal/insulator/metal sandwich structure, significant bipolar resistive switching behavior can be observed. The 1/f noise characteristics of the albumen devices were measured and results suggested that their memory behavior results from the formation and rupture of conductive filaments. Oxygen diffusion and electrochemical redox reaction of metal ions under a sufficiently large electric field are the principal physical mechanisms of the formation and rupture of conductive filaments; these mechanisms were observed by analysis of the time-of-flight secondary ion mass spectrometry (TOF-SIMS) and resistance–temperature (R–T) measurement results. The switching property of the devices remarkably improved by heat-denaturation of proteins; reliable switching endurance of over 500 cycles accompanied by an on/off current ratio (I_on/off) of higher than 10³ were also observed. Both resistance states could be maintained for a suitably long time (>10⁴ s). Taking the results together, the present study reveals for the first time that chicken egg albumen is a promising material for nonvolatile memory applications.

In this study, a p-type 2 at% lithium-doped nickel oxide (abbreviation L2NiO) solution was prepared using Ni(NO₃)₂·6H₂O, and LiNO₃·L2NiO thin films were deposited using an atomizer by spraying the L2NiO solution onto a glass substrate. The sprayed specimen was heated at a low temperature (140 °C) and annealed at different high temperatures and times. This method can reduce the evaporation ratio of the L2NiO solution, affording high-order nucleating points on the substrate. The L2NiO thin films were characterized by X-ray diffraction, scanning electron microscopy, UV–visible spectroscopy, and electrical properties. The figure of merit (FOM) for L2NiO thin films was calculated by Haacke’s formula, and the maximum value was found to be 5.3 × 10⁻⁶ Ω⁻¹. FOM results revealed that the L2NiO thin films annealed at 600 °C for 3 h exhibited satisfactory optical and electrical characteristics for photoelectric device applications. Finally, a transparent heterojunction diode was successfully prepared using the L2NiO/indium tin oxide (ITO) structure. The current–voltage characteristics revealed that the transparent heterojunction diode exhibited rectifying properties, with a turn-on voltage of 1.04 V, a leakage current of 1.09 × 10⁻⁴ A/cm² (at 1.1 V), and an ideality factor of n = 0.46.

A facile synthesis method is proposed for the mass production of high-quality CsPbBr₃ perovskite powder. It is shown that the proposed synthesis protocol is capable of producing polycrystalline CsPbBr₃ powder in quantities greater than 10 g. The derived thin films by thermal evaporation and spin-coating are of compact morphologies (root-mean-square roughness < 4 nm) without voids and pinholes. Moreover, the thin films show obvious photoluminescence (PL) with a narrow (bandwidth < 19 nm) peak centered at ∼520 nm, which is blue-shifted compared with the PL emission of the powder at 542 nm. The powder and the spin-coated film exhibit superior PL stability under long-term ambient conditions and in thermal cycling experiments performed at temperatures up to ∼120 °C. Accordingly, optoelectronic applications including the fabrication and characteristics of the electroluminescence device, the organic–inorganic powder doped with methylammonium and formamidinium ions, and fluorescent greenish-blue quantum dots are also demonstrated. On the basis of these demonstrations, the synthesized CsPbBr₃ perovskite powder can be expected to empower the advances in perovskite-related optoelectronics in the future.

In this study, facile synthesis, characterization, and stability tests of highly luminescent Zn-doped CsPbBr₃ perovskite nanocrystals (NCs) were demonstrated. The doping procedure was performed via partial replacement of PbBr₂ with ZnBr₂ in the precursor solution. Via Zn-doping, the photoluminescence quantum yield (PLQY) of the NCs was increased from 41.3% to 82.9%, with a blue-shifted peak at 503.7 nm and narrower spectral width of 18.7 nm which was consistent with the highly uniform size distribution of NCs observed from the TEM image. In the water-resistance stability test, the doped NCs exhibited an extended period-over four days until complete decomposition, under the harsh circumstances of hexane-ethanol-water mixing solution. The Zn-doped NC film maintained its 94% photoluminescence (PL) intensity after undergoing a heating/cooling cycle, surpassing the un-doped NC film with only 67% PL remaining. Based on our demonstrations, the in-situ Zn-doping procedure for the synthesis of CsPbBr₃ NCs could be a promising strategy toward robust and PL-efficient nanomaterial to pave the way for realizing practical optoelectronic devices.