Nanoporous materials show a promising combination of mechanical properties in terms of their relative density; while there are numerous studies based on metallic nanoporous materials, here we focus on amorphous carbon with a bicontinuous nanoporous structure as an alternative to control the mechanical properties for the function of filament composition.Using atomistic simulations, we study the mechanical response of nanoporous amorphous carbon with 50% porosity, with sp${}^3$ content ranging from 10% to 50%. Our results show an unusually high strength between 10 and 20 GPa as a function of the $\%s{p}^3$ content. We present an analytical analysis derived from the Gibson–Ashby model for porous solids, and from the He and Thorpe theory for covalent solids to describe Young’s modulus and yield strength scaling laws extremely well, revealing also that the high strength is mainly due to the presence of sp${}^3$ bonding. Alternatively, we also find two distinct fracture modes: for low $\%s{p}^3$ samples, we observe a ductile-type behavior, while high $\%s{p}^3$ leads to brittle-type behavior due to high high shear strain clusters driving the carbon bond breaking that finally promotes the filament fracture. All in all, nanoporous amorphous carbon with bicontinuous structure is presented as a lightweight material with a tunable elasto-plastic response in terms of porosity and sp${}^3$ bonding, resulting in a material with a broad range of possible combinations of mechanical properties.

The electron–phonon interaction is a cornerstone of condensed matter physics, playing a pivotal role in the properties of solid-state systems. When localized electronic states are coupled to lattice vibrations, phonons can induce memory effects. This study explores the non-equilibrium dynamics of a negatively charged silicon-vacancy center in diamond, analyzing the effects of both single phonon mode and structured phonon environment. Using numerical simulations and theoretical analysis, we employ trace distance as a metric to identify and understand memory effects in the transient dynamics and non-Markovian evolution. We systematically investigate the impact of longitudinal and transverse magnetic fields, phonon coupling strengths, Fock states, localized vibrations, and temperature on memory effects in this solid-state system. Our findings provide deeper insights into the interplay between electronic states and phonon environments, offering a comprehensive understanding of the conditions that govern the backflow of information in quantum solid-state devices.

The electron-phonon interaction is one of the most fundamental mechanisms in condensed matter physics. Phonons can induce memory effects in solid-state platforms when localized electronic states interact with lattice vibrations in non-unitary dynamical maps. In this work, we demonstrate how single-mode and structured phonon environments can give rise to non-Markovian dynamics of an individual negatively charged silicon-vacancy center in diamond. Using trace distance as a quantifier via numerical simulations and theoretical calculations, we identify the physical conditions for emerging and understanding non-Markovian behavior in diverse scenarios. Most importantly, we investigate the influence of magnetic fields (longitudinal and transverse), phonon couplings, Fock states, and temperature to understand how these factors influence memory effects in this solid-state device.