Plasma enhanced chemical vapor deposition (PECVD) is being increasingly used for the fabrication of transparent dielectric optical films and coatings. This involves single-layer, multilayer, graded index, and nanocomposite optical thin film systems for applications such as optical filters, antireflective coatings, optical waveguides, and others. Beside their basic optical properties (refractive index, extinction coefficient, optical loss), these systems very frequently offer other desirable “functional” characteristics. These include hardness, scratch, abrasion, and erosion resistance, improved adhesion to various technologically important substrate materials such as polymers, hydrophobicity or hydrophilicity, long-term chemical, thermal, and environmental stability, gas and vapor impermeability, and others. In the present article, we critically review the advances in the development of plasma processes and plasma systems for the synthesis of thin film high and low index optical materials, and in the control of plasma–surface interactions leading to desired film microstructures. We particularly underline those specificities of PECVD, which distinguish it from other conventional techniques for producing optical films (mainly physical vapor deposition), such as fabrication of graded index (inhomogeneous) layers, control of interfaces, high deposition rate at low temperature, enhanced mechanical and other functional characteristics, and industrial scaleup. Advances in this field are illustrated by selected examples of PECVD of antireflective coatings, rugate filters, integrated optical devices, and others.

A perfect antireflection (AR) coating would remove completely the reflection from an interface between two media for all wavelengths, polarizations, and angles of incidence. The degree to which this can be achieved is investigated numerically. It is shown that wideband solutions can be found provided that layers can be deposited with refractive indices that are close to that of the low-index medium. Thus realistic solutions exist for interfaces between two solid media. Narrow-band high-angle AR solutions are also possible for polarized light and for unpolarized light in the vicinity of certain reststrahlen bands.

Plasmonic resonances in metallic nanoparticles have been used since antiquity to colour glasses. The use of metal nanostructures for surface colourization has attracted considerable interest following recent developments in plasmonics. However, current top-down colourization methods are not ideally suited to large-scale industrial applications. Here we use a bottom-up approach where picosecond laser pulses can produce a full palette of non-iridescent colours on silver, gold, copper and aluminium. We demonstrate the process on silver coins weighing up to 5 kg and bearing large topographic variations (∼1.5 cm). We find that colours are related to a single parameter, the total accumulated fluence, making the process suitable for high-throughput industrial applications. Statistical image analyses of laser-irradiated surfaces reveal various nanoparticle size distributions. Large-scale finite-difference time-domain computations based on these nanoparticle distributions reproduce trends seen in reflectance measurements, and demonstrate the key role of plasmonic resonances in colour formation.

Recently we performed a numerical investigation of antireflection coatings that reduce significantly the reflection over a wide range of wavelengths and angles of incidence, and we proposed some experiments to demonstrate their feasibility. We provide a theoretical description of omnidirectional antireflection coatings that are effective over a wide range of wavelengths.

There is a large demand for Organic Light-Emitting Displays (OLEDs) with higher contrast, particularly for outdoor applications. We show that lowering the reflectance of OLEDs, which is required for increasing the contrast, can also lead to a reduction of their efficiency when a small microcavity effect is not maintained in their structure. We describe in details the design of high-contrast bottom-emitting OLEDs that have low reflectance but still maintain a small cavity effect for efficient emission.

We assess the influence of the degree of quantum confinement on the carrier recovery times in semiconductor optical amplifiers (SOAs) through an experimental comparative study of three amplifiers, one InAs-InGaAsP-InP quantum dot (0-D), one InAs-InAlGaAs-InP quantum dash (1-D), and one InGaAsP-In-GaAsP-InP quantum well (2-D), all of which operate near 1.55-mum wavelengths. The short-lived (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the three devices are characterized via heterodyne pump-probe measurements. The quantum-dot device is found to have the shortest long-lived gain recovery (~80 ps) as well as gain and phase changes indicative of a smaller linewidth enhancement factor, making it the most promising for high-bit-rate applications. The quantum-dot amplifier is also found to have reduced ultrafast transients, due to a lower carrier density in the dots. The quantum-dot gain saturation characteristics and temporal dynamics also provide insight into the nature of the dot energy-level occupancy and the interactions of the dot states with the wetting layer.