Dr. David del Rio

CEIT-Basque Research and Technology Alliance (BRTA)

Dr. David del Rio

CEIT-Basque Research and Technology Alliance (BRTA)

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Academic Career Length

13Years (2014-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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16 September 2022 in IEEE Transactions on Microwave Theory and Techniques

Journal Article

A D-Band 16-Element Phased-Array Transceiver in 55-nm BiCMOS

David del Rio

Juan F. Sevillano

Rolando Torres

Andoni Irizar

Pascal Roux

Vladimir Ermolov

A 16-element 140–160-GHz phased array transceiver is reported. The chipset is fabricated using STMicroelectronics’ 55-nm SiGe BiCMOS process. Five different chips are implemented: a 4-channel transmitter with a maximum gain per channel of 15 dB and 0-dBm saturated output power; a 4-channel receiver with a maximum gain of 8 dB, a $-$ 10.4-dBm input 1-dB compression point (IP ${_\mathrm{1\,dB}}$ ), and a minimum noise figure (NF) of 15.6 dB per channel; a 0–1-GHz to 140–160-GHz I/Q up-converter with integrated frequency doubler, exhibiting a $-$ 13.5-dB conversion gain (CG) and $-$ 6-dBm output 1-dB compression point using a 70–80-GHz local oscillator (LO); a 140–160-GHz to 0–1-GHz I/Q down-converter with integrated frequency doubler, exhibiting a CG of 0 dB and IP ${_\mathrm{1\,dB}}$ of 0 dBm using a 70–80-GHz LO and an 11.67–13.33-GHz to 70–80-GHz x6 frequency multiplier for the LO, delivering 5.6-dBm maximum output power. The chips are assembled together with 16 cavity-backed aperture-coupled patch antennas using a high-performance and low-cost commercial PCB, supported over a heat sink. The main challenges encountered during the integration of the proposed system are also discussed. The complete system is used to build a wireless radio link in the laboratory, demonstrating 2-D beam steering in a range of $\pm$ 30 $^\circ$ .

23 November 2020 in IEEE Microwave and Wireless Components Letters

Journal Article

A Compact and High-Linearity 140–160 GHz Active Phase Shifter in 55 nm BiCMOS

David del Rio

Inaki Gurutzeaga

Roc Berenguer

Ismo Huhtinen

Juan Francisco Sevillano

This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of -3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5°. The circuit core occupies 0.05 mm², consuming less than 66 mW of dc power.

1 June 2019

Conference Paper

D-Band Transport Solution to 5G and Beyond 5G Cellular Networks

Mario G. L. Frecassetti

Andrea Mazzanti

Juan F. Sevillano

David del Rio

Vladimir Ermolov

The mobile data traffic increase and the future connection of billions of Internet of Things (IoT) devices require operators to reshape the existing transport network architecture. Today, more than 50 % of Base-stations (BTS) are backhauled via radio. Radio technology can continue to play this vital role in future transport networks if it is able to evolve to cope with the new capacity level and latency requirements supporting the new 5G services. In this paper, a possible answer to this demand is provided, proposing a radio solution working in D-Band (130-170 GHz) and enabling a reconfigurable meshed network that can support the backhaul needs of future 5G and beyond networks.

5 September 2022 in IEEE Sensors Journal

Journal Article

A 22-m Operation Range Semi-Passive UHF RFID Sensor Tag With Flexible Thermoelectric Energy Harvester

Hector Solar

Andoni Beriain

Ainhoa Rezola

David del Rio

Roc Berenguer

This article presents a wireless temperature sensor tag able to work in both fully passive mode and in semi-passive mode when assisted by a flexible thermoelectric generator (TEG). The sensor tag consists of an EPC C1G2/ISO 18000-6C ultrahigh-frequency (UHF) radio frequency identification (RFID) integrated circuit (IC) connected to a low-power microcontroller unit (MCU) that samples and collects the temperature from a digital temperature sensor. With a temperature gradient as low as 2.5 °C, the test results show that the TEG provides an output power of 400 $\mu$ W with an output voltage of 40mV. Bymeans of an up-converter in order to boost the TEG output voltage, this harvester supplies the power required to the sensor tag for a 2-conv/s data rate in semi-passive mode. Moreover, when the tag operates in semi-passive mode, a communication range of 22.2 m is measured for a 2-W effective radiated power (ERP) reader. To the best of our knowledge, the proposed TEG-assisted sensor tag shows the longest communication range and the only one that provides stable external power at low-temperature gradients. The measured performance and the chosen architecture allow using the wireless sensor in multiple industrial or biomedical applications.

24 February 2017 in IEEE Transactions on Microwave Theory and Techniques

Journal Article

A Wideband and High-Linearity E-B and Transmitter Integrated in a 55-nm SiGe Technology for Backhaul Point-to-Point 10-Gb/s Links

This paper presents the design of a wideband and high-linearity $E$ -band transmitter integrated in a 55-nm SiGe BiCMOS technology. It consists of a double-balanced bipolar ring mixer which upconverts a 16–21-GHz IF signal to the 71–76- and 81–86-GHz bands by the use of a 55/65-GHz local oscillator signal, followed by a broadband power amplifier which employs 2-way output power combining using an integrated low-loss balun transformer. The transmitter exhibits an average conversion gain of 24 dB and 22 dB at the 71–76- and 81–86-GHz bands, respectively, with an output 1-dB compression point greater than 14 and 11.5 dBm at each band. A maximum output power of 16.8 dBm is measured at 71 GHz. The dc power consumption is 575 mW. The presented transmitter is used to demonstrate the transmission of a 10.12-Gb/s 64 quadrature amplitude modulated signal with a spectral efficiency of 5.06 bit/s/Hz, which makes it suitable for use in future high-capacity backhaul and fronthaul point-to-point links.

19 June 2017 in IEEE Transactions on Microwave Theory and Techniques

Journal Article

Built-in-Self-Calibration for I/Q Imbalance in Wideband Millimeter-Wave Gigabit Transmitters

This paper addresses the estimation and compensation of I/Q imbalance, one of the most prominent impairments found in wideband zero-intermediate frequency transceivers (TRxs). The I/Q imbalance encountered in this kind of TRx comprises not only frequency-selective gain and phase imbalance but also delay imbalance. Unless appropriate compensation is applied, the I/Q imbalance significantly degrades the performance of a communication system. This paper presents a novel compensation technique for transmitter I/Q imbalance based on built-in-self-calibration, a low cost and robust compensation technique that enables manufacturing as well as in-field calibration with low computational complexity. The method's performance is evaluated in a TRx with 64-quadratic-amplitude modulation and 2 GHz of bandwidth implemented with real hardware. The measurements show that the proposed technique achieves an image rejection ratio greater than 35 dB in the entire 2 GHz bandwidth and an error vector magnitude lower than 3%.

About Me

David del Rio was born in San Sebastian, Spain. He received the M.Sc. and International Ph.D. degrees in telecommunication engineering from Tecnun, School of Engineering of the University of Navarra, in 2013 and 2017, respectively. In 2016, he was a Visiting Graduate Researcher with the High Speed Electronics Laboratory of the University of California at Los Angeles, CA, USA, where he was involved in the design of mm-wave multi-band transceivers for 5G communications in a state-of-the-art 28-nm CMOS process. He is currently working as a researcher in the Electronics Systems and Communications group at Ceit Research Centre, San Sebastian. He is also an Associate Professor with the Electrical and Electronic Engineering Department in Tecnun, University of Navarra, where he teaches the courses “Methods for Electronic Design” and “Electronics for Communications”. His current research interests include mm-wave and RF circuit design, power amplifiers, low-noise amplifiers, phased arrays and reconfigurable devices for self-healing systems.

Dr. David del Rio

Dr. David del Rio

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