Dr. Nikita Hari
Lecturer at Dyson Institute of Engineering and Technology
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Academic Career Length
16Years (2011-Present)
(Calculated once Scilit publication data is synced: current year − year of first publication + 1)
Representative Publications
View All Publications1 January 2020 in IEEE Access
Journal Article
Nikita Hari
Mominul AhsanRSRamasamy SRIDHAR
Ramasamy SRIDHAR
Sanjeevikumar Padmanaban
Alhussein Albarbar
Frede BlaabjergA state-of-the-art Machine Learning (ML) based approach, by modeling the behavior of Gallium Nitride (GaN) power electronic devices, is presented in this paper. Switching voltage and current waveforms of these novel devices are accurately predicted using the developed supervised ML algorithm. This was utilised to build a more generic black-box model for these devices. Moreover, long short-term memory unit (LSTM) and gated recurrent unit (GRU) device models have been proposed to make the approach more user friendly. The performance of the developed approach is verified using a set of simulations and experimental tests under 450 V, 10 A test conditions. Model results demonstrate an error rate of 0.03 and convergence speed of 3s with excellent stability. Compared to the existing models, the developed ML-based model produces more accurate results, converges faster and has a better stability. Additionally, the developed ML-based GaN model offers the ability to select the best fit available GaN model (Panasonic, GaN Systems, Transphorm etc.). It automatically configures them into a system that would optimally yield the desired power conversion. This enables a shorter learning curve for the power electronics community, which would lead to acceptance and faster adoption of these devices by the power electronics industry.
1 September 2017
Conference Paper
ESEd Shelton
Ed Shelton
Nikita HariXZXueqiang Zhang
Xueqiang Zhang
TZTianqi Zhang
Tianqi Zhang
JZJin Zhang
Jin Zhang
PPPatrick Palmer
Patrick Palmer
1 November 2017
Conference Paper
CBC. Balaji
C. Balaji
SDSubhransu Shekar Dash
Subhransu Shekar Dash
Nikita HariPBPaduchuri Chandra Babu
Paduchuri Chandra Babu
In this paper, a four-port DC-DC converter(FPC) is proposed for electric vehicle application integrated with renewable sources and energy storage system. The four port of the converter is two input, one bidirectional port, and one output. The charging, discharging states and the disturbance at the input side are controlled. The detailed analysis and simulation of the four-port DC-DC converter are presented in this paper. The proposed converter is the non-isolated type converter hence compact size is achieved.
1 November 2016
Conference Paper
SPSomashree Pathy
Somashree Pathy
RSR Sridhar
R Sridhar
Nikita HariSDSubhranshu Sekhar Dash
Subhranshu Sekhar Dash
SCSubramani Chinnamuthu
Subramani ChinnamuthuPresently, most of the commercial and industrial sectors are using PV system because of its advantages towards clean and green energy. Subsequently, it is not an ideal power source as it solely depends upon sun light. In the recent past, a lot of research and development has been carried out to enhance the reliability, efficiency and cost effectiveness of power electronics converters in order to increase the conversion efficiency from the PV cells. Thus, this paper presents a modified interleaved Flyback inverter for standalone PV applications. The proposed system is developed by interleaving of three Fly-back cells along with one PV source. The effectiveness of the design have been validated by PV based Fly-back converter simulation model. Also, a real time prototype of the proposed system is built and evaluated under realistic conditions.
1 June 2017 in Energy Procedia
Journal Article
1 October 2017
Conference Paper
ESEdward Shelton
Edward Shelton
XZXueqiang Zhang
Xueqiang Zhang
TZTianqi Zhang
Tianqi Zhang
Nikita HariPPPatrick Palmer
Patrick Palmer
Wide Band Gap power semiconductor switching devices offer superior performance compared to an equivalent Si power device. SiC MOSFETs can be competitive when compared to Si IGBTs of the same voltage class, whilst offering greater benefits at high switching frequencies. Operating SiC MOSFETs at high switching frequencies imposes significant challenges, including: Ringing and voltage overshoot issues, making accurate high bandwidth measurements, and the requirement for a high-performance gate drive circuit. This paper presents a prototype low inductance PCB design for a SiC MOSFET switching circuit. In addition, a linear current gate-drive circuit and a high bandwidth on-board measurement system have been developed and the designs for these are presented. The measurement system showed good agreement with the external probe measurements and superior bandwidth. Hard-switching tests with a 900V SiC MOSFET showed that the dVDS/dt becomes largely invariant to changes in load current when using a current source gate drive. The measured dVDS/dt slew rates are compared with the dVDS/dt slew rates estimated from the parameter values given in the SiC MOSFET datasheet, and the two sets of results show good agreement. In this paper, the performance of an optimised circuit is successfully demonstrated and the benefits are discussed.
About Me
Nikita joined Dyson Institute as a Lecturer in Electronics in Sept 2020. Before that, she was a Schlumberger Post-Doctoral Fellow at the Department of Engineering Sciences, University of Oxford (2019-20) with a Doctorate in Electrical Engineering from University of Cambridge (2013-18).
She was a gold medallist and university topper for both undergraduate (BTech) and master’s degree (MTech) in Engineering. She undertook her PhD research in Electrical Engineering from the Department of Engineering, University of Cambridge as a Churchill College member. She was awarded scholarships from Cambridge University Nehru Trust, Federation for Women Graduates and Google Europe to pursue her multidisciplinary research in Gallium Nitride (GaN) power electronics. Her doctoral research investigated introducing Machine Learning to bridge the gap between the laboratory and commercial application space in GaN power electronics. Nikita's current multi-disciplinary research interests range from Machine learning for Power Electronics, GaN Power Electronics, AI Policy to Disruptive Technology Innovations in Engineering and its Impact on Developing Economies & Socio-Cultural Identities.
Listed in the ‘Top 50 Women in Engineering in UK' in 2017(Women’s Engineering Society), she is a Global Ambassador for the Queen Elizabeth Prize for Engineering and a TEDx Speaker. Beyond an educator, Nikita is a EdTech Entrepreneur and a champion for women in STEM aspiring to engineer society for good.