A defined surface roughness is important for the adhesive bonding of veneering ceramic to zirconia frameworks. Thus, we investigated the effects that sandblasting has upon the surface roughness and residual stress of zirconia. So as to achieve well-defined blasting parameters and also generate highly reproducible results; a custom-made, automated sandblasting machine was constructed (based on a 3D-printer construction kit). Thirty-two samples (measuring 30 mm × 35 mm × 0.2 mm) were cut from densely sintered 3Y-TZP blanks and then ground with a 45 µm grinding disc. After undergoing regeneration firing, the samples were sandblasted with varying working parameters: blasting angle (45°, 60° and 90°); blasting pressure (2 bar, 4 bar and 6 bar); and working distance (0.5 cm, 1.0 cm and 1.5 cm). The sandblasting path was chosen so as to create samples with an even surface roughness. Changes in blasting pressure resulted in the greatest changes in the surface roughness, the highest surface roughness values were achieved with sandblastings perpendicular to the sample surface. Furthermore, a correlation was found between the mean surface roughness and the residual stress.
A surface-adsorbed molecule is contacted with the tip of a scanning tunneling microscope (STM) at a predefined atom. On tip retraction, the molecule is peeled off the surface. During this experiment, a two-dimensional differential conductance map is measured on the plane spanned by the bias voltage and the tip-surface distance. The conductance map demonstrates that tip retraction leads to mechanical gating of the molecular wire in the STM junction. The experiments are compared with a detailed ab initio simulation. We find that density functional theory (DFT) in the local density approximation (LDA) describes the tip-molecule contact formation and the geometry of the molecular junction throughout the peeling process with predictive power. However, a DFT-LDA-based transport simulation following the nonequilibrium Green's function (NEGF) formalism fails to describe the behavior of the differential conductance as found in experiment. Further analysis reveals that this failure is due to the mean-field description of electron correlation in the local density approximation. The results presented here are expected to be of general validity and show that, for a wide range of common wire configurations, simulations which go beyond the mean-field level are required to accurately describe current conduction through molecules. Finally, the results of the present study illustrate that well-controlled experiments and concurrent ab initio transport simulations that systematically sample a large configuration space of molecule-electrode couplings allow the unambiguous identification of correlation signatures in experiment.