The analysis of a solid-state Marx modulator (S²M²) topology, which have been developed for repetitive high-voltage (in kilovolts) applications, needing positive or negative rectangular pulses, is presented. The proposed topology benefits from the intensive use of semiconductors, allowing kilohertz operation with different load conditions. In addition to resistive loads, capacitive loads can be discharged to ground after each pulse and inductive loads can be clamped and the energy recovered to the main capacitors. Furthermore, the presented topology and proposed switching sequence enables the use of typical half-bridge semiconductor structures currently integrated in modular packages, which is advantageous for circuit assembling and triggering the semiconductors. Discussion on the advantages and limitation will be given. Finally, experimental results of some modulator features will be presented.

A generalized circuit topology for bipolar or unipolar high voltage repetitive pulse power applications is proposed. This circuit merges the negative and positive solid state Marx modulator concepts, which take advantage of the intensive use of semiconductor devices to increase the performance of the original dissipative Marx modulators. The flexibility of the proposed modular circuit enables the operation with negative and/or positive pulses, selectable duty cycles, frequencies and relaxation times between the positive and negative pulse. Additionally, the switching topology enables the discharge of the parasitic capacitances after each pulse, allowing the use of capacitive loads, and the clamping of inductive loads, recovering the reset energy back to the main capacitors. Analysis of efficiency and power loss will be addressed, as well as experimental details for different conditions based on laboratory prototype, with 1200 volt Insulated Gate Bipolar Transistors (IGBT), diodes, and 4.5 muF capacitors.

Marx generators are widely used to produce transient high-voltage pulses. The evolution of semiconductor devices and power electronics concepts promotes the development of solid-state Marx generators (SSMGs) and enables them with flexible pulse modulation ability. First, this article sorts out the evolution of SSMGs topologies chronologically. We can see that how the energy efficiency of SSMGs is considerably improved by replacing resistors with diodes and switches and how square-wave pulses are generated by SSMGs based on half-bridge structures. Unipolar and bipolar pulses can be easily produced with different SSMGs. Second, we discuss the influence of rated voltage and rated power of present semiconductor switches on the performances of SSMGs since switches are the key components in pulse generators. To reduce the size and weight of SSMGs, metal–oxide–semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs) with small packages are preferable. Third, synchronous isolated driving of switches as the crucial technique in SSMGs is introduced. Different methods of providing synchronous signals and isolated power to various stages in SSMGs are illustrated. Fourth, the performance including load capacity, droop compensation, waveform modulation, and self-triggering of SSMGs is discussed. In the end, the developing trend of SSMGs is given.

The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 μs pulse width and 5 μs relaxation time into resistive, capacitive, and inductive loads.

This paper describes the operation of a solid-state generator proposed to produce high-frequency bipolar high-voltage pulse bursts on resistive-type loads, intended for medical applications. The generator design is based on two independent solid-state unipolar positive Marx generators positioned back to back, where the load is placed between the outputs of the two generators. SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) are used in order to allow high-frequency operation. A generator with two five-stage Marx generators is experimentally tested in order to deliver up to 5000-V/50-A bipolar pulses, with 500-ns-10-μs pulse widths and 200-ns-10-μs relaxation time between positive and negative pulses. The generator operates in the burst mode from 1 to 200 pulses, in excess of 500 kHz within the burst, which can have a repetition frequency up to 1 kHz limited by the input 1000-V/200-W power supply, with forced air cooling. Results, with resistive-type loads, for several single pulse and burst mode operations are presented and discussed.