We present the design and results of characterisation of a new sideband separating (2SB) mixer for 800–950 GHz, based on superconductor-insulator-superconductor (SIS) junctions. This is the first waveguide 2SB SIS mixer demonstrated at such a high frequency. The design is following the classical quadrature hybrid architecture, meanwhile additional attention was put on the reduction of reflections in the RF structure in order to minimise the RF imbalance, to achieve a high image rejection ratio (IRR). The RF waveguide block was manufactured by micro-milling and populated by single-ended SIS mixers developed earlier for upgrade of the CHAMP+ high band array on the APEX telescope. These SIS mixers have DSB noise temperatures from 210 to 400 K. The assembled 2SB mixer yields a single-sideband noise temperature from 450 to 900 K, with an image rejection ratio above 15dB in 95% of the band. Comparing the DSB and SSB sensitivities, we find that the waveguide losses are as low as expected and do not exceed 0.6 dB. The presented mixer is a prototype for use in a 2SB dual polarisation receiver planned for deployment on the APEX telescope.

Mixers based on superconductor–insulator–superconductor (SIS) tunnel junctions are the best input devices at frequencies from 0.1 to 1.2 THz. This is explained by both the extremely high nonlinearity of such elements and their extremely low intrinsic noise. Submicron tunnel junctions are necessary to realize the ultimate parameters of SIS receivers, which are used as standard devices on both ground and space radio telescopes around the world. The technology for manufacturing submicron Nb–AlN–NbN tunnel junctions using electron-beam lithography was developed and optimized. This article presents the results on the selection of the exposure dose, development time, and plasma chemical etching parameters to obtain high-quality junctions (the ratio of the resistances below and above the gap R_j/R_n). The use of a negative-resist ma-N 2400 with lower sensitivity and better contrast in comparison with a negative-resist UVN 2300-0.5 improved the reproducibility of the structure fabrication process. Submicron (area from 2.0 to 0.2 µm²) Nb–AlN–NbN tunnel junctions with high current densities and quality parameters R_j/R_n > 15 were fabricated. The spread of parameters of submicron tunnel structures across the substrate and the reproducibility of the cycle-to-cycle process of tunnel structure fabrication were measured.

A multielement bolometric receiver system has been developed to measure the power and polarization of radiation at a calculated frequency of 345 GHz. Arrays of ten series-parallel connected cold-electron bolometers have been pairwise integrated into orthogonal ports of a cross-slot antenna. Arrays are connected in parallel in the high-frequency input signal and in series in the output signal, which is measured at a low frequency, and in a dc bias. Such an array makes it possible to increase the output resistance by two orders of magnitude as compared to an individual bolometer under the same conditions of high-frequency matching and to optimize the matching with the JFET amplifier impedance up to dozens of megohms. Parallel connection ensures matching of the input signal to the cross-slot antenna with an impedance of 30 Ω on a massive silicon dielectric lens. At a temperature of 100 mK, a response to the thermal radiation of a thermal radiation source with an emissivity of 0.3, which covers the input aperture of the antenna and is heated to 3 K, is 25 μV/K. Taking into account real noise, the optical fluctuation dc sensitivity is 5 mK, the estimated sensitivity corresponding to the noise of the amplifier is about 10⁻⁴ K/Hz^1/2, and the noise-equivalent power is about (1–5) × 10⁻¹⁷ W/Hz^1/2.

Normal-metal hot-electron bolometers, each of which contains two superconductor-insulator-normal metal (SIN) junctions for electron cooling and two SIN junctions for temperature measurements, were fabricated and experimentally studied. The electron cooling by SIN junctions is an analog of the Peltier effect and allows one to reduce the effective electron temperature of a bolometer. The electron temperature was determined from the ratio of the differential resistance to normal one for several values of a constant bias. At a phonon temperature of 250 mK, the resistance ratio at zero bias reached 1000, which was close to the theoretical value for an ideal SIN junction. A decrease in the electron temperature from 250 to 90 mK was obtained.