This work proposes an experimental configuration for the generation of a cold atmospheric pressure plasma jet at the downstream end of a long flexible plastic tube. The device consists of a cylindrical dielectric chamber where an insulated metal rod that serves as high-voltage electrode is inserted. The chamber is connected to a long (up to 4 m) commercial flexible plastic tube, equipped with a thin floating Cu wire. The wire penetrates a few mm inside the discharge chamber, passes freely (with no special support) along the plastic tube and terminates a few millimeters before the tube end. The system is flushed with Ar and the dielectric barrier discharge (DBD) is ignited inside the dielectric chamber by a low frequency ac power supply. The gas flow is guided by the plastic tube while the metal wire, when in contact with the plasma inside the DBD reactor, acquires plasma potential. There is no discharge inside the plastic tube, however an Ar plasma jet can be extracted from the downstream tube end. The jet obtained by this method is cold enough to be put in direct contact with human skin without an electric shock. Therefore, by using this approach an Ar plasma jet can be generated at the tip of a long plastic tube far from the high-voltage discharge region, which provides the safe operation conditions and device flexibility required for medical treatment.

An atmospheric pressure dielectric barrier discharge burning in nitrogen with a small admixture of hexamethyldisiloxane (HMDSO) was used for the deposition of thin organosilicon films. The thin films were deposited on glass, silicon and polycarbonate substrates, and the substrate temperature during the deposition process was increased up to values within the range 25–150 °C in order to obtain hard SiO _x -like thin films. The properties of the discharge were studied by means of optical emission spectroscopy and electrical measurements. The deposited films were characterized by the Rutherford backscattering and elastic recoil detection methods, x-ray photoelectron spectroscopy, infrared spectroscopy measurements, ellipsometry and the depth sensing indentation technique. It was found that the films' properties depend significantly on the substrate temperature at deposition. An increase in substrate temperature from 25 to 150 °C led to an increase in film hardness from 0.4 to 7 GPa and the film chemical composition changed from CH _x Si _y O _z to SiO _x H _y . The films were transparent in the visible range.