Spinel zinc ferrite nanomaterials with exceptional physiochemical properties are potential candidates for various applications in the energy and environmental fields. Their properties can be tailored using several methods to widen their applications. The chemical combustion approach was followed to prepare the spinel zinc ferrite nanomaterials, which were then subjected to thermal treatment at a fixed temperature. Thermal heat treatment at a fixed temperature was used to evaluate the phase and morphological characteristics of the prepared spinel zinc−ferrite nanocomposites. Various techniques were employed to examine the samples, including X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). XPS and X-ray−induced Auger electron spectroscopy were used to extensively examine the surface characteristics of the zinc−ferrite. To study the actual chemical states of the synthesized spinel zinc ferrite nanomaterials and the defects created during the thermal treatment, an extensive investigation of the kinetic energy of the X-ray−induced Zn L₃M₄₅M₄₅ and Fe L₃M₄₅M₄₅ was conducted. Finally, a detailed analysis of the Wagner plot using the modified Auger parameter was performed to verify the exact chemical states of Zn and Fe. Thus, the findings of the investigation show that XPS is a promising and powerful technique to study the composition and chemical states of spinel zinc ferrites, providing an understanding of changes in their properties for functional applications.

Chalcogenide phase-change materials (PCMs) are showing versatile possibilities in cutting-edge applications, including non-volatile memory, neuromorphic computing, and nano-photonics. However, for embedded phase-change memory applications, conventional PCMs suffer from insufficient thermal stability because of their relatively low crystallization temperatures (T_x). Although doping with additional alloying elements could improve the amorphous stability, it also increases the tendency towards compositional partitioning and phase separation. Recently, a two-dimensional (2D) layered compound CrGeTe₃ (CrGT) was developed as a PCM, showing a high T_x ~ 276 °C with an inverse change in resistive-switching character upon phase transition. Here, we report a high-throughput materials screening for 2D layered phase-change chalcogenides. We aim to clarify whether the high T_x and the inverse electrical resistance contrast are intrinsic features of 2D PCMs. In total, twenty-five 2D chalcogenides with CrGT trilayer structures have been identified from a large database. We then focused on selected layered tellurides by performing thorough ab initio simulations and experimental investigations and confirming that their amorphous phase indeed has a much higher T_x than conventional PCMs. We attribute this enhanced amorphous stability to the structurally complex nuclei required to render crystallization possible. Overall, we regard InGeTe₃ as a balanced 2D PCM with both high thermal stability and large electrical contrast for embedded memory applications.