This paper discusses the multi-domain modeling and simulation issues of the design and analysis of heterogeneous integrated systems. Modeling and simulation method- ology and tools are also discussed.

The methods of parameter optimization in Etch3DTM simulator and the results of the comparison of simulations of silicon etching in KOH with experiments are presented. The aim of this study was to calibrate the tool to a set of process conditions that is offered by Institute of Electron Technology (ITE). The Taguchi approach was used to analyze the influence of every remove probability function (RPF) parameter on one or more output parameters. This allowed tuning the results of simulation to the results of real etching performed in ITE.

The complex silicon systems formed by the several specialized devices like SOC, RF devices, power devices, MEMS wafers are fabricated in dedicated technologies. If the designer attempts to integrate them into the one big multifunctional system, he meets the new, yet unexplored fields for the multidisciplinary, mutually dependent thermal, electrical, EM and mechanical parameters modeling. This article attempts to clarify, and presents how to simplify this problem.

The paper proposes an innovative method of using microheaters for research on cells in vitro. A method of local heating of a single culture well, compatible with an Electric Cell-substrate Impedance (ECIS) system is presented. A microheater and culture well system for cell culture was modelled. Electrical and thermal simulation of the system under operating conditions was carried out. Correct distribution of heat was observed at the site of the cell culture suspension in the medium, while not affecting the conditions in adjacent wells. As part of the experiment, a heating element of nichrome (NiCr) was created using the magnetron sputtering process. Electrical and thermal measurements of the manufactured device were carried out. It has been shown that it is possible to establish the desired temperature over the long term. In addition, the structures made were characterised by work stability, precision in maintaining the right temperature, and the possibility of being controlled with high accuracy. There is a problem with the precise and reproducible carrying out of a cell culture experiment that differs only in the process temperature. In this work, a technique for increasing the temperature locally, in a single culture well, in a medium containing eight such wells was proposed and analyzed. The use of this method will allow avoidance of the impact of potential changes in parameters other than temperature on the culture. That may occur when comparing cells grown at different temperatures by means of the ECIS (Electric Cell-substrate Impedance) method.