We propose and experimentally demonstrate a hybrid free space optical (FSO) communication and radio frequency (RF) multiple-input and multiple-output (MIMO) system for interference separation. The system switches between FSO and RF MIMO modes and makes use of the complementary advantages of the two modes. The MIMO receiver separates signal of interest from in-band interference with blind source separation (BSS), while the separation ratio is limited by the physical dimensions of the MIMO antenna array. With FSO channel, the system achieves over 30dB signal to interference plus noise ratio, so the wireless system can transmit signals with high orders of modulation. When the FSO channel is blocked and line-of-sight transmission condition is not satisfied, the system switches to the RF MIMO mode for interference cancellation. The wireless system maintains continuous transmission at a lower bit rate. Both the FSO mode and the RF MIMO mode can be seamless integrated with photonic signal processing system for wideband and real-time interference cancellation.

In this paper, we propose and experimentally demonstrate a three-dimensional (3D) microscopic system that reconstructs a 3D image based on structured light illumination. The spatial pattern of the structured light changes according to the profile of the object, and by measuring the change, a 3D image of the object is reconstructed. The structured light is generated with a digital micro-mirror device (DMD), which controls the structured light pattern to change in a kHz rate and enables the system to record the 3D information in real time. The working distance of the imaging system is 9 cm at a resolution of 20 μm. The resolution, working distance, and real-time 3D imaging enable the system to be applied in bridge and road crack examinations, and structure fault detection of transportation infrastructures.

We propose and experimentally demonstrate an optical pulse sampling method for photonic blind source separation. The photonic system processes and separates wideband signals based on the statistical information of the mixed signals, and thus the sampling frequency can be orders of magnitude lower than the bandwidth of the signals. The ultra-fast optical pulses collect samples of the signals at very low sampling rates, and each sample is short enough to maintain the statistical properties of the signals. The low sampling frequency reduces the workloads of the analog to digital conversion and digital signal processing systems. In the meantime, the short pulse sampling maintains the accuracy of the sampled signals, so the statistical properties of the under-sampled signals are the same as the statistical properties of the original signals. The linear power range measurement shows that the sampling system with ultra-narrow optical pulse achieves a 30dB power dynamic range.

We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest amplified spontaneous emission power (4.3 dBm) and chip gain (26.4 dB) at 1550 nm, with a 300 mA CW bias current and at 25 °C temperature, while SOAs with fewer Qdash layers (for example, three-layer Qdash SOA), had a wider ASE bandwidth (90 nm) and larger 3 dB gain saturated output power (18.2 dBm) in a shorter wavelength range. The noise figure (NF) of the SOAs increased nearly linearly with the number of Qdash layers. The longest gain peak wavelength of 1570 nm was observed for the 12-layer Qdash SOA. The most balanced performance was obtained with a five-layer Qdash SOA, with a 25.4 dB small-signal chip gain, 15.2 dBm 3 dB output saturated power, and 5.7 dB NF at 1532 nm, 300 mA and 25 °C. These results are better than those of quantum well SOAs reported in a recent review paper. The high performance of InAs/InP Qdash SOAs with different Qdash layers shown in this paper could be important for many applications with distinct requirements under uncooled scenarios.

We proposed and experimentally demonstrated a free-space optical stealth communication system that hides the stealth signal in wide-band spontaneous emission noise. Spontaneous emission light sources have been widely used for illuminations and has been recently deployed for short distance and indoor free-space optical communications, such as LiFi. Since free-space optical communication is a broadcasting network, the users’ privacy is exposed to eavesdropping attacks. In this paper, stealth communication is achieved by taking advantage of the existing properties of spontaneous emission light sources, random phase fluctuations, and protects users’ privacy in free-space communication networks. The keys to hide and recover the stealth signal are the optical delays at the transmitter and receiver. Only by matching the delay length with the pre-shared keys can the authorized receiver recover the stealth signal. Without the right key, the eavesdropper receives a constant power that is the same as illumination light sources and cannot detect the existence of the stealth signal.

This paper demonstrates a five-layer InAs/InP quantum-dash semiconductor optical amplifier (QDash-SOA), which will be integrated into microwave-photonic on-chip devices for millimeter-wave (mmWave) over fibre wireless networking systems. A thorough investigation of the QDash-SOA is conducted regarding its communication performance at different temperatures, bias currents, and input powers. The investigation shows a fibre-to-fibre (FtF) small-signal gain of 18.79 dB and a noise figure of 6.3 dB. In a common application with a 300 mA bias current and 25 °C temperature, the peak FtF gain is located at 1507.8 nm, which is 17.68 dB, with 3 dB gain bandwidth of 56.6 nm. Furthermore, the QDash-SOA is verified in a mmWave radio-over-fibre link with QAM (32 Gb/s 64-QAM 4-GBaud) and OFDM (250 MHz 64-QAM) signals. The average error vector magnitude of the QAM and OFDM signals after a 2 m wireless link could be as low as 8.29% and 6.78%, respectively. These findings highlight the QDash-SOA’s potential as a key amplifying component in future integrated microwave-photonic on-chip devices.