Dr. Yao-Feng Chang is a Memory Reliability Engineer at Intel. He received the B.S., M.S., and PhD degrees in Electrical Engineering from National Sun Yat-sen University in 2007, in Electronics Engineering from National Chiao Tung University in 2009, and in the Department of Electrical and Computer Engineering from The University of Texas at Austin in 2015. He has published over 100 journal publications. Research topics: (1) SiO x - and SiN x - Based ReRAM fabrication, characterization, and mechanism. (2) Stateful Boolean logic and synaptic Post-Moore computing, and bio-inspiration biomimetic systems in electronic devices. (3) Selector integration for large-scale low power array design.