A method of measuring the precise temperature distribution of GaN-based light-emitting diodes (LEDs) by quantitative infrared micro-thermography is reported. To reduce the calibration error, the same measuring conditions were used for both calibration and thermal imaging; calibration was conducted on a highly emissive black-painted area on a dummy sapphire wafer loaded near the LED wafer on a thermoelectric cooler mount. We used infrared thermal radiation images of the black-painted area on the dummy wafer and an unbiased LED wafer at two different temperatures to determine the factors that degrade the accuracy of temperature measurement, i.e., the non-uniform response of the instrument, superimposed offset radiation, reflected radiation, and emissivity map of the LED surface. By correcting these factors from the measured infrared thermal radiation images of biased LEDs, we determined a precise absolute temperature image. Consequently, we could observe from where the local self-heat emerges and how it distributes on the emitting area of the LEDs. The experimental results demonstrated that highly localized self-heating and a remarkable temperature gradient, which are detrimental to LED performance and reliability, arise near the p-contact edge of the LED surface at high injection levels owing to the current crowding effect.

An infrared lifetime thermal imaging technique for the measurement of lettuce seed viability was evaluated. Thermal emission signals from mid-infrared images of healthy seeds and seeds aged for 24, 48, and 72 h were obtained and reconstructed using regression analysis. The emission signals were fitted with a two-term exponential model that had two amplitudes and two time variables as lifetime parameters. The lifetime thermal decay parameters were significantly different for seeds with different aging times. Single-seed viability was visualized using thermal lifetime images constructed from the calculated lifetime parameter values. The time-dependent thermal signal decay characteristics, along with the decay amplitude and delay time images, can be used to distinguish aged lettuce seeds from normal seeds.

In this study, a portable and large-area blackbody system was developed following a series of processes including design, computational analysis, fabrication, and experimental analysis and evaluation. The blackbody system was designed to be lightweight (5 kg), and its temperature could exceed the ambient temperature by up to 15 °C under operation. A carbon-fiber-based heat source was used to achieve a uniform temperature distribution. A heat shield fabricated from an insulation material was embedded at the opposite side of the heating element to minimize heat loss. A prototype of the blackbody system was fabricated based on the design and transient coupled electro-thermal simulation results. The operation performance of this system, such as the thermal response, signal transfer function, and noise equivalent temperature difference, was evaluated by employing an infrared imaging system. In addition, emissivity was measured during operation. The results of this study show that the developed portable and large-area blackbody system can be expected to serve as a reliable reference source for the calibration of aerial infrared images for the application of aerial infrared techniques to remote sensing.

In this paper, we report on a confocal thermoreflectance imaging system that can examine the thermal characteristics of microelectronic devices by penetrating the backside of a device through the substrate. In this system, the local reflectivity variations due to heat generation in the device are measured point by point by a laser scanning confocal microscope capable of eliminating out-of-focus reflections and the thermoreflectance is extracted via Fourier-domain signal processing. In comparison to the conventional widefield thermoreflectance microscope, the proposed laser scanning confocal thermoreflectance microscope improves the thermoreflectance sensitivity by ~23 times and the spatial resolution by ~25% in backside thermoreflectance measurements.

We developed a 193-nm deep ultraviolet (DUV) microscope system based on the reflection mode for a precise inspection of various types of defects/cracks on large optical surfaces of the order of one meter in size. Without preprocessing the sample at room temperature and atmospheric pressure, which is commonly necessary for electron microscopy, the reflective 193-nm DUV microscope was used to directly observe optical surface defects in a manner similar to conventional optical microscopes. In addition, the limitations on the selection of materials and thickness of optical samples of transmittive DUV microscopes were overcome. DUV microscope imaging and the analysis on the spatial resolution were verified using a 1D grating structure with a 225-nm line width. This system could be widely applied as an inspection tool because it provides high resolution at the 200-nm scale that is close to the diffraction limit of a 193-nm DUV beam. In the near future, it is expected that our system would be extended to nano/bio imaging as well as the inspection of large optical surfaces.

Micro-electronic devices are increasingly incorporating miniature multi-layered integrated architectures. However, the localization of faults in three-dimensional structure remains challenging. This study involved the experimental and numerical estimation of the depth of a thermally active heating source buried in multi-layered silicon wafer architecture by using both phase information from an infrared microscopy and finite element simulation. Infrared images were acquired and real-time processed by a lock-in method. It is well known that the lock-in method can increasingly improve detection performance by enhancing the spatial and thermal resolution of measurements. Operational principle of the lock-in method is discussed, and it is represented that phase shift of the thermal emission from a silicon wafer stacked heat source chip (SSHSC) specimen can provide good metrics for the depth of the heat source buried in SSHSCs. Depth was also estimated by analyzing the transient thermal responses using the coupled electro-thermal simulations. Furthermore, the effects of the volumetric heat source configuration mimicking the 3D through silicon via integration package were investigated. Both the infrared microscopic imaging with the lock-in method and FE simulation were potentially useful for 3D isolation of exothermic faults and their depth estimation for multi-layered structures, especially in packaged semiconductors.