sheng liu

Dr. sheng liu

Huazhong University of Science and Technology, Wuhan, Hubei, China
orcid

Research Focus & Metrics

Academic Career Length

25Years (2002-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 September 2016 in Progress in Energy and Combustion Science
Verified
Journal Article
Closed access
XLXiaobing Luo
Xiaobing Luo
Run HuRun Hu
Run Hu
SLsheng liu
sheng liu
KWKai Wang
Kai Wang

28 January 2016 in ACS Nano
Verified
Journal Article
Open access
GWGuoping Wang
Guoping Wang
XCXuechen Chen
Xuechen Chen
SLsheng liu
sheng liu
CWChing-Ping Wong
Ching-Ping Wong
SCSheng Chu
Sheng Chu
The development of camouflage methods, often through a general resemblance to the background, has recently become a subject of intense research. However, an artificial, active camouflage that provides fast response to colour change in the full-visible range for rapid background matching remains a daunting challenge. To this end, we report a method, based on the combination of bimetallic nanodot arrays and electrochemical bias, to allow for plasmonic modulation. Importantly, our approach permits real-time light manipulation readily matchable to the colour setting in a given environment. We utilize this capability to fabricate a biomimetic mechanical chameleon and an active matrix display with dynamic colour rendering covering almost the entire visible region.

28 June 2020 in Micromachines
Verified
Journal Article
Open access
PDF file
YLYan Liu
Yan Liu
YCYao Cai
Yao Cai
YZYi Zhang
Yi Zhang
ATAlexander Tovstopyat
Alexander Tovstopyat
SLsheng liu
sheng liu
CSChengliang Sun
Chengliang Sun
With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators.

1 May 2019 in Optics Express
Verified
Journal Article
Closed access
PDF file
SZShengjun Zhou
Shengjun Zhou
XLXingtong Liu
Xingtong Liu
HYHan Yan
Han Yan
ZCZhiwen Chen
Zhiwen Chen
YLYingce Liu
Yingce Liu
SLsheng liu
sheng liu
High-power flip-chip light-emitting diodes (FCLEDs) suffer from low efficiencies because of poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is possible to improve both the light extraction efficiency (LEE) and current spreading of an FCLED by incorporating a highly reflective metallic reflector made from silver (Ag). The reflector, which consists of an Ag film covered by three pairs of TiW/Pt multilayers, demonstrates high reflectance of 95.0% at 460 nm at arbitrary angles of incidence. Our numerical simulation and experimental results reveal that the FCLED with Ag-based reflector exhibits higher LEE and better current spreading than the FCLED with indium-tin oxide (ITO)/distributed Bragg reflector (DBR). As a result, the external quantum efficiency (EQE) of FCLED with Ag-based reflector was 6.0% higher than that of FCLED with ITO/DBR at 750 mA injection current. Our work also suggests that the EQE of FCLED with the Ag-based reflector could be further enhanced 5.2% by replacing the finger-like n-electrodes with three-dimensional (3D) vias n-electrodes, which spread the injection current uniformly over the entire light-emitting active region. This study paves the way towards higher-performance LED technology.

17 March 2022 in Nanoscale
Verified
Journal Article
Closed access
PDF file
SZShengjun Zhou
Shengjun Zhou
XZXiaoyu Zhao
Xiaoyu Zhao
PDPeng Du
Peng Du
ZZZiqi Zhang
Ziqi Zhang
XLXu Liu
Xu Liu
LGL. Jay Guo
L. Jay Guo
Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state lighting and high-resolution displays. As one of the widely used substrates, sapphire shows superiority for heteroepitaxial growth of III-nitride light-emitting diode (LED) structure, due to the advantages of stability, low cost, high mechanical strength, as well as mature fabrication technology. However, realization of efficient LEDs grown on sapphire substrate is impeded by high density of defects in epilayers and low light extraction efficiency. The emergence of patterned sapphire substrate (PSS) turns out to be a promising and effective technology to overcome these problems and enhance the LED performances. In this review, we first introduce the background and recent advances of PSS applied in III-nitride visible and ultraviolet LEDs are. Then, we summarize the fabrication methods of PSS, together with novel methods to define nanometre-scale patterned structures. We further demonstrate the effect of PSS that contributes to reduce the threading dislocation density (TDD) of epilayers in detail. Meanwhile, mechanism of light extraction efficiency enhancement by adopting PSS is presented based on numerical analysis. Next, we explore the influence of PSS structural parameters (e.g. pattern size, pattern shape and aspect ratio) on LED performances, spanning from visible to deep ultraviolet UV emission region. Finally, challenges and potential prospects in PSS for future LED development are proposed and forecasted as well.

8 January 2010 in Applied Optics
Verified
Journal Article
Closed access
PDF file
ZLZongyuan Liu
Zongyuan Liu
SLsheng liu
sheng liu
KWKai Wang
Kai Wang
XLXiaobing Luo
Xiaobing Luo
The optical properties of YAG:Ce phosphor were measured by a double-integrating-sphere system and calculated by Mie theory and Monte Carlo ray tracing to provide precise optical characterizations of YAG:Ce phosphor for white light-emitting diode (LED) packaging design. Measurement results showed that the phosphor presents strong absorption for blue light, high reflection for yellow light, and an isotropic emission pattern of converted light. The conversion efficiency and quantum efficiency for the saturated phosphor are around 70% and 87%, respectively. Based on the measurement results, the absorption coefficient, scattering coefficient, and anisotropy factor of the phosphor calculated by Mie theory were compared with those calculated by ray-tracing simulation to modify Mie theory to find a reasonable method that can easily obtain the optical constants of YAG:Ce phosphor. Comparisons revealed that Mie theory can predict the variation of the optical constants of phosphor, but the absorption and scattering cross sections should be multiplied with two fitting parameters. The fitting pa rameters have been given in this study and can be obtained by testing packaged LEDs with different phosphor concentrations.