In this work, we report the temperature dependence of the electrical parameters of PEDOT:PSS/ZnO Schottky barrier diodes (SBDs) grown on glass substrates. To understand the current conduction mechanism, the current–voltage–temperature characteristics of PEDOT:PSS/ZnO thin film SBDs were studied. The electrical parameters were extracted with both thermionic emission and Cheung models. The obtained Richardson constant and effective barrier height were 5 A cm ⁻² °K ⁻² and 0.74 eV, respectively. The diode ideality factor was 1.5 and the series resistance was 36 Ω. All these electrical parameters turned out to be temperature independent which was associated with the dominant transport mechanisms of thermionic emission. The Richardson constant slightly deviates from theoretical values due to the presence of interfacial defects created by the preparation and deposition of PEDOT:PSS and the ZnO film crystallinity. The conductive polymer PEDOT:PSS, as a Schottky contact to ZnO, arises as an alternative to the expensive noble metals: Pt, Pd, Ag and metal oxides: IrOx, PdOx, PtOx.

Copper oxide films aided by selective corrosion have been synthesized. Using copper (Cu) foils of commercial printed circuit boards (PCBs), chemical attack in small areas on Cu surfaces and their oxidation with heating process in air atmosphere at low temperature have allowed to produce Cu oxide layers. Phase formation of Cu oxide samples was validated by X‐ray diffraction studies, and their conduction properties were registered and evaluated by current‐voltage curves. Stability analysis of the Cu oxide samples was conducted by a correlation profile between average strain and Cu oxide percentage grown, which confirms that the structure defects dependent on plastic deformation define the existence of both CuO and Cu₂O phases beneficial to mitigate corrosion and advance in Cu oxide‐based devices to build electronic circuits as components on PCBs.

A method to manage the resistivity of n-type ZnO films is presented. It involves the controlled diffusion of Zn at low temperature in N2 atmosphere into the ZnO/Zn/ZnO structure. The structures were made by DC sputtering technique. The diffusion periods were varied from 5 to 30 min. This process allow us to obtain ZnO films with excess of Zn (ZnO:Zn). The electrical characterization showed that the resistivity of the films can be varied from 0.01 to 100 omega-cm, the electron concentration from 10(19) to 10(17) cm(-3) and the carrier mobility from 10 to 40 cm2N-s. The films are nanocrystalline with preferred (002) orientation and crystal size that varies from 13 to 20 nm depending on the diffusion period. The films have a band gap of 3.18 eV and 70% of transmittance in the visible region, these properties were obtained from the transmittance measurements of low-resistivity films. Films have good structural, optical and electrical properties, and could be used in the manufacture of light emitting diodes.