The need for high power density and high temperature capabilities in today's electronic devices continues to grow. More robust devices with reliable and stable functioning capabilities are needed, for example in aerospace and automotive industries as well as sensor technology. These devices need to perform under extreme temperature conditions, and not show any deterioration in terms of switching speeds, junction temperatures, and power density, and so on. While the bulk of research is performed to source and manufacture these high temperature devices, the device interconnect technology remains under high focus for packaging. The die attach material has to withstand high temperatures generated during device functioning and also cope with external conditions which will directly determine how well the device performs in the field. This literature work seeks to review the numerous research attempts thus far for high temperature die attach materials on wide band gap materials of silicon carbide, gallium nitride and diamond, document their successes, concerns and application possibilities, all of which are essential for high temperature reliability.

An analysis of fast and slow traps at the interface of 4H–SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.

Extracted, formulated, and processed natural Aloe vera has been used as an active layer for memory applications. The functional memory device is realized by a bottom-up structure of ITO/Aloe vera/Al in which the Aloe vera is spin-coated after mixing with different concentrations of ethanol (0–80 wt%) and subsequently dried at different temperatures (50–120 °C). From the current density–voltage measurements, the device can exhibit a reproducible bipolar switching characteristic with pure Aloe vera dried at 50 °C. It is proposed that charges are transported across the Aloe vera layer via space-charge-limited conduction (SCLC), and clusters of interstitial space formed by the functional groups of acemannans and de-esterified pectins in the dried Aloe vera contribute to the memory effect. The formation of charge traps in the Aloe vera layer is dependent on the drying temperature. The drying temperature of a memory-switching Aloe vera layer can be extended to 120 °C with the addition of appropriate amounts of ethanol. The concept of using natural Aloe vera as an active material for memory applications has been demonstrated, and the read memory window, ON/OFF ratio, and retention time are approximately 5.0 V, 10³, and >10⁴ s, respectively.

In this paper, current conduction mechanisms of an atomic-layer-deposited ${\text{HfO}}_2$ gate stacked on different thicknesses of thermally nitrided ${\text{SiO}}_2$ based on $n$ -type 4H SiC have been investigated and analyzed. Current-voltage and high-frequency capacitance-voltage measurements conducted at various temperatures $\left(25-140°\text{C}\right)$ were performed in metal-oxide-semiconductor test structures with 13 nm thick ${\text{HfO}}_2$ stacked on 0-, 2-, 4-, or 6 nm thick nitrided ${\text{SiO}}_2$ . Various conduction mechanisms, such as Schottky emission, Fowler-Nordheim tunneling, Poole-Frenkel emission, and space-charge-limited conduction, have been systematically evaluated. The mechanisms of the current conducted through the oxides were affected by the thickness of the nitrided oxide and the electric field applied. Finally, current conduction mechanisms that contributed to hard and soft dielectric breakdown have been proposed.