This paper shows that the nanostructures deposited at room temperature in scanning tunneling microscopy experiments are produced by mechanical contact between tip and sample. Gold mounds are deposited in gold substrates and it is observed that the current flowing between tip and sample is quantized and the resistance can be as low as 100 Ω.

Material structures of reduced dimensions exhibit electrical and mechanical properties different from those in the bulk. Measurements of room-temperature electronic transport in pulled metallic nanowires are presented, demonstrating that the conductance characteristics depend on the length, lateral dimensions, state and degree of disorder, and elongation mechanism of the wire. Conductance during the elongation of short wires (length ℓ ∼ 50 angstroms) exhibits periodic quantization steps with characteristic dips, correlating with the order-disorder states of layers of atoms in the wire predicted by molecular dynamics simulations. The resistance R of wires as long as ℓ ∼ 400 angstroms exhibits localization characteristics with In R (ℓ) ∼ ℓ ² .

Creating or connecting together large organic molecules, as polycyclic aromatic hydrocarbons (PAH), by chemical reactions readily on surfaces is the first step to a true advance in the field of molecular electronics. On-surface synthesis can be regarded as an efficient means to build new molecular species by using bottom-up strategies. Recently, a collection of different reactions leading to large tailor-made organic molecules on single-crystal metal surfaces has been reported. The fundamental mechanisms controlling these reactions can be investigated from a surface science perspective. This discipline skillfully combines the use of characterization techniques at the nanoscale, with single-crystal metallic surfaces able to catalyse these reactions. We present a tutorial review that highlights the relevance of the new bottom up strategies and classifies most of the different molecular on-surface reactions involving aromatic organic molecules that have been published up to date.

We report hot filament thermal CVD (HFTCVD) as a new hybrid of hot filament and thermal CVD and demonstrate its feasibility by producing high quality large area strictly monolayer graphene films on Cu substrates. Gradient in gas composition and flow rate that arises due to smart placement of the substrate inside the Ta filament wound alumina tube accompanied by radical formation on Ta due to precracking coupled with substrate mediated physicochemical processes like diffusion, polymerization etc., led to graphene growth. We further confirmed our mechanistic hypothesis by depositing graphene on Ni and SiO₂/Si substrates. HFTCVD can be further extended to dope graphene with various heteroatoms (H, N, and B, etc.,), combine with functional materials (diamond, carbon nanotubes etc.,) and can be extended to all other materials (Si, SiO₂, SiC etc.,) and processes (initiator polymerization, TFT processing) possible by HFCVD and thermal CVD.