In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm². These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on–off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.

The monolithic integration of InGaN-based micro-LEDs is being of interest toward developing full-color micro-displays. However, the color stability in InGaN red micro-LED is an issue that needs to be addressed. In this study, the modified distributed Bragg reflectors (DBRs) were designed to reduce the transmission of undesired spectra. The calculated optical properties of the InGaN red micro-LEDs with conventional and modified DBRs have been analyzed, respectively. The CIE 1931 color space and the encoded 8-bit RGB values are exhibited for the quantitative assessment of color stability. The results suggest the modified DBRs can effectively reduce the color shift, paving the way for developing full-color InGaN-based micro-LED displays.

Nowadays, the flurry of autonomous vehicles is in full swing regarding light detection and ranging (LiDAR) and depth perception. For such visual perception, light plays an important role. We human beings recognize and distinguish surrounding details when the eye focuses light on the retina. For the LiDAR system, pulsed lasers are employed to measure the relevant range. Thus, appropriate light sources with high performance are in urgent demand. Auspiciously, a revolutionary semiconductor laser technology, namely the photonic-crystal surface-emitting laser (PCSEL), emerges over the past two decades. PCSEL exhibits not only a symmetric beam profile with narrow beam divergence but also a high-power operation with controllability. Therefore, it may be the holy grail for an ultracompact time-of-flight (ToF) LiDAR system. Hereupon, comprehensive analyses of PCSEL-relevant scientific publications and patent documents are conducted. We thereby review the development progress of PCSEL technology. Moreover, a systematic simulation is performed, providing real-time visualization of relevant point clouds with different beam divergence. PCSEL technology with unprecedented merits indeed turns a new leaf and a paradigm shift in LiDAR application is ongoing. It is believed that a lens-free and adjustment-free ultracompact apparatus in simplicity can be expected.

This study conducts comprehensive performance analyses of a commercial photonic-crystal surface-emitting laser (PCSEL) via small-signal measurement and the bit-error-rate test. Meanwhile, the radio frequency characteristics of the PCSEL are unveiled for the first time. Compared to the vertical-cavity surface-emitting lasers, the PCSEL shows great potential for a broader optical bandwidth that is benefited from the high optical-confinement factor. A maximum bandwidth of around 2.32 GHz is experimentally observed when the PCSEL was biased at 340 mA. Moreover, a theoretical calculation was applied to shed light on the characteristics of the small-signal measurement, providing a deep insight into the corresponding intrinsic response model. The signal transmission capability of the PCSEL was investigated as well. The maximum bit rate and corresponding rise time transmitted at 500 Mbps are 1.2 Gbps and 186.16 ps, respectively. Thus, a high-speed PCSEL can be realised with a shrunk form factor, serving as a promising candidate for the next-generation light sources in high-speed optical communication.