The use of photons to directly or indirectly drive chemical reactions has revolutionized the field of nanomaterial synthesis resulting in appearance of new sustainable laser chemistry methods for manufacturing of micro‐ and nanostructures. The incident laser radiation triggers a complex interplay between the chemical and physical processes at the interface between the solid surface and the liquid or gas environment. In such a multi‐parameter system, the precise control over the resulting nanostructures is not possible without deep understanding of both environment‐affected chemical and physical processes. The present review intends to provide detailed systematization of these processes surveying both well‐established and emerging laser technologies for production of advanced nanostructures and nanomaterials. Both gases and liquids are considered as potential reacting environments affecting the fabrication process, while subtractive and additive manufacturing methods are analyzed. Finally, the prospects and emerging applications of such technologies are discussed.

The position of activator ions in the lattice has a fundamental effect on the luminescent properties of phosphors. In this paper, we describe the normal and defect sites of Eu³⁺ ions in a Y₂O₃ crystal lattice, their interaction and difference in physical properties. Analytically detectable amounts of defect sites reached in Y₂O₃:Eu³⁺ nanopowders with an average size of 40–50 nm were synthesized by a novel combined Pechini-foaming method. The luminescence properties of Eu³⁺ ions in defect sites are most pronounced in highly doped nanocrystalline powders (32 and 40 at%). To explain this phenomenon we suggest the mechanism of irreversible energy transfer from normal to defect sites of Eu³⁺ ions.

The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb₂S₃ light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb₂S₃/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb₂S₃, with and without the ultrathin ZnS interlayer, and with systematically varied Sb₂S₃ thickness provides a complete picture of the physical processes at work in the devices.