A modified microstrip Franklin array antenna (MFAA) is proposed for short-range radar applications in vehicle blind spot information systems (BLIS). It is shown that the radiating performance [i.e., absolute gain value and half-power beamwidth (HPBW) angle] can be improved by increasing the number of radiators in the MFAA structure and assigning appropriate values to the antenna geometry parameters. The MFAA possesses a high absolute gain value (>10 dB), good directivity (HPBW <;20°) in the E-plane, and large-range coverage (HPBW >80°) in the H-plane at an operating frequency of 24 GHz. Moreover, the 10-dB impedance bandwidth of the proposed antenna is around 250 MHz. The MFAA is, thus, an ideal candidate for automotive BLIS applications.

In this paper, a thermally crosslinkable 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) film served as the hole transporting layer (HTL) of perovskite CsPbBr₃ quantum-dot light-emitting diodes (QD-LEDs) was investigated and reported. The VB-FNPD film crosslinked at various temperatures in the range of 100~230 °C followed by a spin-coating process to improve their chemical bonds in an attempt to resist the erosion from the organic solvent in the remaining fabrication process. It is shown that the device with VB-FNPD HTL crosslinking at 170 °C has the highest luminance of 7702 cd/m², the maximum current density (J) of 41.98 mA/cm², the maximum current efficiency (CE) of 5.45 Cd/A, and the maximum external quantum efficiency (EQE) of 1.64%. Our results confirm that the proposed thermally crosslinkable VB-FNPD is a candidate for the HTL of QD-LEDs.

Aluminum nitride (AlN) thin films with different orientations ( i.e. , amorphous, (100)- and (002)-oriented) are deposited on Pt/Ti/SiO ₂ /Si substrates via the radio-frequency (RF) sputtering method.

The power consumption (PC), window margin (WM), thermal stability (TS), and reliability [i.e., endurance (EN) and retention-time (RT)] of aluminum nitride (AlN) resistive random access memory (RRAM) devices with different film orientations [i.e., amorphous, (100)- and (002)-oriented] are investigated. It is shown that the charge carrier transport mechanism of the three devices is dominated by Ohmic behavior under low electric fields and the trap-controlled space charge limited current (TC-SCLC) model under high electric fields. Among the three devices, the (002)-oriented AlN sample provides the best overall PC, WM, TS, EN, and RT performance due to its c-axis orientation, which is favorable for the formation and rupture of the vertically arranged conductive filaments (CFs) in the AlN film.

In this study, blue perovskite quantum dots (PQDs) were prepared using didodecyldimethylammonium bromide (DDAB), which can passivate surface defects caused by the loss of surface ligands and reduce particle size distribution. After the passivation of DDAB, blue CsPbCl_xBr_3−x PQDs dispersed in n-octane produced a more compact and uniform PQD thin film than the non-passivated ones. The resulting device showed a stabile lifetime, and an EL peak of 470 nm and a maximum EQE of 1.63% were obtained at an operating voltage of 2.6 V and a current density of 0.34 mA/cm². This work aims to provide a simple method to prepare blue-emitting PQDs and high-performance PQD-based light-emitting devices.

Nb-doped ZnO (Nb_xZn_1−xO, NZO) thin films with various Nb additions (x = 0, 0.2, 0.5, and 0.8 at. %) were deposited on Pt/TiO₂/SiO₂/Si substrates by radio frequency magnetron sputtering. The Nb doping concentration was found to affect the microstructure, the number of oxygen vacancies, and work function of the Pt/NZO/Pt structures. Among the various devices, the film with 0.5 at. % Nb addition showed a better switching-voltage stability [i.e., the optimal coefficient of variation (C_v) for reset (7.02%) and set (2.73%) operations, respectively], a high endurance (∼1000 cycles), and lower reset (0.57 V) and set (1.83 V) voltages due to a larger number of oxygen vacancies and a lower work function. In general, the results show that the present NZO thin films are promising candidates for stable and low power-consumption resistive random access memory applications.