The poor stability of CsPbX₃ quantum dots (QDs-CsPbX₃) under wet conditions is still considered to be a key issue. In order to overcome this problem, this study presents a high molecular weight polymer matrix (polymethylmethacrylate, PMMA) incorporated into the QDs-CsPbBr₃ to improve its stability and maintain its excellent optical properties. In this study, the Cs₂CO₃, PbO, Tetrabutylammonium Bromide (TOAB) powder, oleic acid, and toluene solvent were uniformly mixed and purified to prepare high-quality QDs powders. Then, hexane was used as a dispersing agent for the QD powder to complete the perovskite QDs-CsPbBr₃ solution. Finally, a solution with different proportions of quantum dots CsPbBr₃ and PMMA was prepared and discussed. In the preparation of thin films, firstly, a thin film with the structure of glass/QD-CsPbBr₃/PMMA was fabricated in a glove box using a well-developed QDs-CsPbBr₃ solution by changing the ratio of CsPbBr₃:PMMA. The material analysis of QDs-CsPbBr₃ thin films was performed with photoluminescence (PL), transmittance, absorbance, and transmission electron microscopy (TEM). The structures and morphologies were further examined to study the effect of doped PMMA on perovskite QDs-CsPbBr₃.

Random lasing from CsPbBr ₃ quantum dots (QDs) prepared by the hot injection method under ambient conditions has been demonstrated. The random laser produced a speckle reduced image with a contrast of around 0.051.

High-quality perovskite CsPbBr₃ quantum dots (QDs-CsPbBr₃) were prepared using the ultrasonic oscillation method, which is simple and provides variable yield according to requirements. The emission spectra over a large portion of the visible spectral region (450–650 nm) of QD-CsPbX₃ (X = Cl, Br, and I) have tunable compositions that can be halide exchanged using the halide anion exchange technique and quantum size-effects. A strong peak with high intensity of (200) lattice plane of purified QDs-CsPbBr₃ film is obtained, confirming the formation of an orthorhombic perovskite crystal structure of the Pnma space group. The photoluminescence of QDs-CsPbBr₃ was characterized using a narrow line-width emission of 20 nm, with high quantum yields of up to 99.2%, and radioactive lifetime increasing to 26 ns. Finally, through the excellent advantages of QDs-CsPbBr₃ mentioned above, purified perovskite QDs-CsPbBr₃ as an active layer was utilized in perovskite quantum dot light-emitting diodes structure applications. As a result, the perovskite QDs-CsPbBr₃ light-emitting diodes (LEDs) exhibits a turn-on voltage of 7 V and a maximum luminance of 5.1 cd/m².

In this paper, a thermally crosslinkable 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) film served as the hole transporting layer (HTL) of perovskite CsPbBr₃ quantum-dot light-emitting diodes (QD-LEDs) was investigated and reported. The VB-FNPD film crosslinked at various temperatures in the range of 100~230 °C followed by a spin-coating process to improve their chemical bonds in an attempt to resist the erosion from the organic solvent in the remaining fabrication process. It is shown that the device with VB-FNPD HTL crosslinking at 170 °C has the highest luminance of 7702 cd/m², the maximum current density (J) of 41.98 mA/cm², the maximum current efficiency (CE) of 5.45 Cd/A, and the maximum external quantum efficiency (EQE) of 1.64%. Our results confirm that the proposed thermally crosslinkable VB-FNPD is a candidate for the HTL of QD-LEDs.

Solution-processed light-emitting device was feasibly achieved by a new exciplex-forming BCz3Ph : PO-T2T blend as the emitting layer casted on top of a thermally polymerized hole-transporting layer formed by a dicarbazole-based monomer BCzC4Sy.