Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric applications standard, threshold voltage measurements at a single specified current, transistor I-V and charge-pumping characteristics have been monitored. This has been shown to be useful in providing a more detailed insight into processes that occur during irradiation and subsequent annealing at elevated temperature. In particular, the role of switching oxide traps (also known as "border" traps) and electron traps in studied devices has been revealed.

The mechanisms leading to initiation of electrical breakdown in geometrically identical argon-filled tubes at different pressures were investigated by the memory curves. It was shown that the positive ions and metastable states, remaining from the previous discharge, have the dominant role in the initiation of breakdown in early and late afterglow periods, respectively. Contributions to the breakdown of gamma photons from radioactive sources ${(}^{60}\mathrm{Co})$ and cosmic rays were also analyzed.