We have developed an integrated microfluidic platform for producing 2-[¹⁸F]-fluoro-2-deoxy-D-glucose (¹⁸F-FDG) in continuous flow from a single bolus of radioactive isotope solution, with constant product yields achieved throughout the operation that were comparable to those reported for commercially available vessel-based synthesisers (40–80%). The system would allow researchers to obtain radiopharmaceuticals in a dose-on-demand setting within a few minutes. The flexible architecture of the platform, based on a modular design, can potentially be applied to the synthesis of other radiotracers that require a two-step synthetic approach, and may be adaptable to more complex synthetic routes by implementing additional modules. It can therefore be employed for standard synthesis protocols as well as for research and development of new radiopharmaceuticals.

Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric applications standard, threshold voltage measurements at a single specified current, transistor I-V and charge-pumping characteristics have been monitored. This has been shown to be useful in providing a more detailed insight into processes that occur during irradiation and subsequent annealing at elevated temperature. In particular, the role of switching oxide traps (also known as "border" traps) and electron traps in studied devices has been revealed.

As a semiconductor component radiation effects and technology demonstration experiment, the Technology Demonstration Module (TDM) integrated into the PROBA-II satellite, was launched on November 2nd 2009, into a 800 km polar orbit. This SEU/SEL experiment, in strong support to the Reference SEU Monitor database , will be described and details given about ground testing and calibrations. Since ground testing was carried out on flight lot devices and under flight operational conditions, the in-orbit SEU/SEL database will eventually become a vital reference point for improved modeling, prediction and testing. Evidence to confirm this promise is starting to emerge and will be presented at the end of the paper. As the present in-orbit number of events is still small, only the first month of flight performance will be presented with strong emphasis on validating correct operation of monitored devices.

Key aspects of continuous operation of Radiation Sensitive Field Effect Transistors (RADFETs) as radiation monitors in space missions are addressed. The effect of possible temperature fluctuations and long-term fading on threshold-voltage measurement of Implanted and Unimplanted gate oxide RADFETs were studied. Evidence for temperature coefficient changes following irradiation and annealing cycles is presented. In addition, fading of unimplanted gate oxide RADFETs is shown to be significantly lower than that of Implanted ones.