The application of hydrogenated amorphous silicon (a–Si:H) to optoelectronic devices are now well established as a viable low cost technology and is presently receiving much interest. Taking advantage of the properties of a–Si:H based devices, single and dual axis large area (up to 80×80 mm²) thin film position sensitive detectors (TFPSD) based on a–Si:H p–i–n diodes have been developed, produced by plasma enhanced chemical vapor deposition. In this study, the main optoelectronic properties presented by the TFPSD as well as their behavior under operation conditions, concerning its linearity and signal to noise ratio, are reported.

In SERS analysis, the specificity of molecular fingerprints is combined with potential single-molecule sensitivity so that is an attractive tool to detect molecules in trace amounts. Although several substrates have been widely used from early on, there are still some problems such as the difficulties to bind some molecules to the substrate. With the development of nanotechnology, an increasing interest has been focused on plasmonic metal nanoparticles hybridized with (2D) nanomaterials due to their unique properties. More frequently, the excellent properties of the hybrids compounds have been used to improve the drawbacks of the SERS platforms in order to create a system with outstanding properties. In this review, the physics and working principles of SERS will be provided along with the properties of differently shaped metal nanoparticles. After that, an overview on how the hybrid compounds can be engineered to obtain the SERS platform with unique properties will be given.

Characteristics of tunable wavelength pi'n/pin filters based on a-SiC:H multilayered stacked cells are studied both experimentally and theoretically. Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. An algorithm to decode the multiplex signal is established. A capacitive active band-pass filter model is presented and supported by an electrical simulation of the state variable filter circuit. Experimental and simulated results show that the device acts as a state variable filter. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter using a changing capacitance to control the power delivered to the load.