Stable thin-film transistors (TFTs) with semiconducting indium oxide channel and silicon dioxide gate dielectric were fabricated by reactive ion beam assisted evaporation and plasma-enhanced chemical vapor deposition. The field-effect mobility is $3.3{\mathrm{cm}}^2∕\mathrm{V}\mathrm{s}$ , along with an on/off current ratio of ${10}^6$ , and subthreshold slope of $0.5\mathrm{V}$ /decade. When subject to long-term gate bias stress, the TFTs show fast recovery of the threshold voltage $\left(V_T\right)$ when relaxed without annealing, suggesting that charge trapping at the interface and/or in the bulk gate dielectric to be the dominant mechanism underlying $V_T$ instability. Device performance and stability make indium oxide TFTs promising for display applications.

This letter reports a low leakage $p\text{-}\mathrm{Ni}\mathrm{O}∕i\text{-}\mathrm{Zn}\mathrm{O}∕n\text{-}\mathrm{ITO}$ ultraviolet photodiode fabricated at room temperature by ion beam assisted e-beam evaporation. Analysis of its $J\text{-}V$ characteristics, and time-dependent behavior, reveals that the dominant source of leakage current stems from deep defect states in the ZnO $i$ layer, with its dynamic response at low signal levels limited by charge trapping in the absorption layer. Under a $5\mathrm{V}$ reverse bias, the dark current density is $10\mathrm{nA}∕{\mathrm{cm}}^2$ and quantum efficiency is 18% at a wavelength of $380\mathrm{nm}$ , with a photoresponse behavior that is linear over $5\text{decades}$ .