A new flower-like hybrid structure consisting of nitrogen-doped 3-dimensional (3D) graphene and vertically aligned graphene has been synthesized using a combination of low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques. Active nitrogen (N) species were found to be essential for the growth of the flower-like morphology. N-doping was responsible for enhanced electrical conductivity and wettability of the obtained nano-carbon hybrid structure. Based on the conducted studies a growth mechanism has been proposed. The high specific surface area, low resistance to charge transfer and enhanced specific capacitance of this nitrogen-doped hybrid structure, makes it an excellent candidate material for supercapacitors.

The development of new flexible and lightweight electronics has increased the demand for compatible energy storage devices to power them. Carbon nanotube (CNT) fibers have long been known for their ability to be assembled into yarns, offering their integration into electronic devices. They are hindered, however, by their low intrinsic energy storage properties. Herein, we report a novel composite yarn, synthesized through solvothermal processes, that attained energy densities in the range between 0.17 µWh/cm² and 3.06 µWh/cm², and power densities between 0.26 mW/cm² and 0.97 mW/cm², when assembled in a supercapacitor with a PVDF-EMIMBF4 electrolyte. The created unique composition of iron oxalate + iron hydroxide + CNT as an anode worked well in synergy with the much-studied PANI + CNT cathode, resulting in a highly stable yarn energy storage device that maintained 96.76% of its energy density after 4000 cycles. This device showed no observable change in performance under stress/bend tests which makes it a viable candidate for powering wearable electronics.

The substitution of traditional copper power transmission cables with lightweight copper–carbon nanotube (Cu–CNT) composite fibers is critical for reducing the weight, fuel consumption, and CO₂ emissions of automobiles and aircrafts. Such a replacement will also allow for lowering the transmission power loss in copper cables resulting in a decrease in coal and gas consumption, and ultimately diminishing the carbon footprint. In this work, we created a lightweight Cu–CNT composite fiber through a multistep scalable process, including spinning, densification, functionalization, and double-layer copper deposition. The characterization and testing of the fabricated fiber included surface morphology, electrical conductivity, mechanical strength, crystallinity, and ampacity (current density). The electrical conductivity of the resultant composite fiber was measured to be 0.5 × 10⁶ S/m with an ampacity of 0.18 × 10⁵ A/cm². The copper-coated CNT fibers were 16 times lighter and 2.7 times stronger than copper wire, as they revealed a gravimetric density of 0.4 g/cm³ and a mechanical strength of 0.68 GPa, suggesting a great potential in future applications as lightweight power transmission cables.

In recent years, significant efforts have been dedicated to understanding the growth mechanisms behind the synthesis of vertically aligned nanocarbon structures using plasma-enhanced chemical vapor deposition (PECVD). This study explores how varying synthesis conditions, specifically hydrocarbon flow rate, hydrocarbon type, and plasma power,—affect the microstructure, properties, and electrochemical performance of nitrogen-doped vertically aligned graphene (NVG) and nitrogen-doped vertically aligned carbon nanofibers (NVCNFs) hybrids. It was observed that adjustments in these synthesis parameters led to noticeable changes in the microstructure, with particularly significant alterations when changing the hydrocarbon precursor from acetylene to methane. The electrochemical investigation revealed that the sample synthesized at higher plasma power exhibited enhanced electron transfer kinetics, likely due to the higher density of open edges and nitrogen doping level. This study contributes to better understanding the PECVD process for fabricating nanocarbon materials, particularly for sensor applications.

Fiber-shaped batteries have attracted much interest in the last few years. However, a major challenge for this type of battery is their relatively low energy density. Here, we present a freestanding, flexible CNT fiber with high electrical conductivity and applied oxygen plasma-functionalization, which was successfully employed to serve as an effective cathode for Li-S batteries. The electrochemical results obtained from the conducted battery tests showed a decent rate capability and cyclic stability. The cathode delivered a capacity of 1019 mAh g⁻¹ at 0.1 C. It accommodated a high sulfur loading of 73% and maintained 47% of the initial capacity after 300 cycles. The demonstrated performance of the fiber cathode provides new insights for the designing and fabrication of high energy density fiber-shaped batteries.

Previously, we reported 3D Shaped 3D Graphene (3D2G) with controlled structural pores. In this work, we introduce cold rolling as a post-processing technique to obtain compressed 3D2G referred to as C3D2G. The gravimetric density, electrical conductivity, and tensile strength of C3D2G were higher than 3D2G by 37.3, 53.4, and 24.9 times, respectively. The performed comprehensive materials characterization of C3D2G revealed the micro-motion of the graphene flakes from their random orientations into a stacked and aligned structure along with the extrusion of bulk material into the structural pores which acted as stress-relief spaces. Further, a new process was demonstrated enabling the welding of multiple pieces into one structure via cold rolling, thus showing potential for dimensional scaling up. The conducted tensile and electrical conductivity studies across the welded region revealed the presence of a mechanical bond within the joined area with a higher strength than the initial pieces involved in welding. Due to the enhanced properties of C3D2G, a unique application of this material was explored as a reusable, etch-resistant hard mask for patterning silicon wafers, and as a protective barrier against fluorine plasma environment. The etch rate measurements showed a higher etching resistance of C3D2G compared to Si and SiO2 when exposed to a fluorine plasma Reactive Ion Etching (RIE).