Based on the Boltzmann transport equation, we demonstrate that the thermal conductance per unit width of a sufficiently thin polar nanofilm supporting the propagation of surface-phonon polaritons along its surfaces is independent of the material properties and is given by , where and are the respective Boltzmann and Planck constants, while is the light speed in vacuum, is the temperature, and is the Riemann zeta function. The huge propagation length of these energy carriers establishes that this quantization holds not only for temperatures much smaller than 1 K, as is the case of electrons and phonons, but also for those comparable to room temperature, which can significantly facilitate its observation and implementation in the thermal management of nanoscale electronics and photonics.
Efficient heat dissipation in micro/nano electronics requires long-distance propagation of heat carriers operated above room temperature. However, thermal phonons—the primary heat carriers in dielectric nanomaterials—dissipate the thermal energy after just a few hundred nanometers. Theory predicts that the mean free path of surface phonon-polaritons (SPhPs) can be hundreds of micrometers, which may improve the overall dissipation of heat in nanomaterials. In this work, we experimentally demonstrate such long-distance heat transport by SPhPs. Using the 3 technique, we measure the in-plane thermal conductivity of SiN nanomembranes for different heater-sensor distances, membrane thicknesses, and temperatures. We find that thin nanomembranes support heat transport by SPhPs, as evidenced by an increase in the thermal conductivity with temperature. Remarkably, the thermal conductivity measured 200 μm away from the heater is consistently higher than that measured 100 μm closer. This result suggests that heat conduction by SPhPs is quasi-ballistically over at least hundreds of micrometers. Our findings pave the way for coherent heat manipulations above room temperature over macroscopic distances, which impacts the applications in thermal management and polaritonics.
We experimentally demonstrate the enhancement of the far-field thermal radiation between two nonabsorbent Si microplates coated with energy-absorbent silicon dioxide () nanolayers supporting the propagation of surface phonon polaritons. By measuring the radiative thermal conductance between two coated Si plates, we find that its values are twice those obtained without the coating. This twofold increase results from the hybridization of polaritons with guided modes inside Si and is well predicted by fluctuational electrodynamics and an analytical model based on a two-dimensional density of polariton states. These findings could be applied to thermal management in microelectronics, silicon photonics, energy conversion, atmospheric sciences, and astrophysics.
Surface phonon-polaritons (SPhPs) are evanescent electromagnetic waves that can propagate distances orders of magnitude longer than the typical mean free paths of phonons and electrons. Therefore, they are expected to be powerful heat carriers capable of significantly enhancing the in-plane thermal conductance of polar nanostructures. In this work, we show that a SiO2/Si (10 m thick)/SiO2 layered structure efficiently enhances the SPhP heat transport, such that its in-plane thermal conductance is ten times higher than the corresponding one of a single SiO2 film, due to the coupling of SPhPs propagating along both of its polar SiO2 nanolayers. The obtained results thus show that the proposed three-layer structure can outperform the in-plane thermal performance of a single suspended film while improving significantly its mechanical stability.
Nanoscale heat conduction is limited by surface scattering of phonons but can be enhanced by surface phonon-polaritons (SPhPs), which are the hybridization of photons and optical phonons in polar materials. Here, we analyze the dispersion of SPhPs in a multilayer system consisting of a silicon (Si) layer sandwiched between two silicon dioxide (SiO2) nanolayers. We find that SPhPs generated in SiO2 nanolayers couple with guided resonant modes and propagate mainly in the nonabsorbent Si layer for microscale Si thicknesses. This coupling yields an enhancement in thermal conductivity with Si thickness. In contrast, for nanoscale Si thicknesses, evanescent components of SPhPs couple inside the Si layer, resulting in a higher thermal conductivity for thinner Si layers. The transition between these two different coupling phenomena provides the minimum of the in-plane SPhP thermal conductivity at a Si thickness of approximately 1 μm. Our finding brings deeper insight into thermal management in electronics and semiconductors.