Understanding and controlling modal coupling in micro/nanomechanical devices is integral to the design of high-accuracy timing references and inertial sensors. However, insight into specific physical mechanisms underlying modal coupling, and the ability to tune such interactions is limited. Here, we demonstrate that tuneable mode coupling can be achieved in capacitive microelectromechanical devices with dynamic electrostatic fields enabling strong coupling between otherwise uncoupled modes. A vacuum-sealed microelectromechanical silicon ring resonator is employed in this work, with relevance to the gyroscopic lateral modes of vibration. It is shown that a parametric pumping scheme can be implemented through capacitive electrodes surrounding the device that allows for the mode coupling strength to be dynamically tuned, as well as allowing greater flexibility in the control of the coupling stiffness. Electrostatic pump based sideband coupling is demonstrated, and compared to conventional strain-mediated sideband operations. Electrostatic coupling is shown to be very efficient, enabling strong, tunable dynamical coupling.

This paper reviews the research and development of micromachined accelerometers with a noise floor lower than 1 µg/√Hz. Firstly, the basic working principle of micromachined accelerometers is introduced. Then, different methods of reducing the noise floor of micromachined accelerometers are analyzed. Different types of micromachined accelerometers with a noise floor below 1 µg/√Hz are discussed. Such sensors can mainly be categorized into: (i) micromachined accelerometers with a low spring constant; (ii) with a large proof mass; (iii) with a high quality factor; (iv) with a low noise interface circuit; (v) with sensing schemes leading to a high scale factor. Finally, the characteristics of various micromachined accelerometers and their trends are discussed and investigated.

This paper reports a three degree-of-freedom (3DoF) microelectromechanical systems (MEMS) resonant sensing device consisting of three weakly coupled resonators with enhanced sensitivity to stiffness change. If one resonator of the system is perturbed by an external stimulus, mode localization occurs, which can be detected by a change of modal amplitude ratio. The perturbation can be, for example, a change in stiffness of one resonator. A detailed theoretical investigation revealed that a mode aliasing effect, along with the thermal noise floor of the sensor and the associated electrical system ultimately limit the dynamic range of the sensor. The nonlinearity of the 3DoF sensor was also analyzed theoretically. The 3DoF resonator device was fabricated using a silicon on insulator process. Measurement results from a prototype device agreed well with the predictions of the analytical model. A significant, namely 49 times, improvement in sensitivity to stiffness change was evident from the fabricated 3DoF resonator sensor compared with the existing state-of-the-art 2DoF resonator sensors, while the typical nonlinearity was smaller than ±2% for a wide span of stiffness change. In addition, measurements indicate that a dynamic range of at least 39.1 dB is achievable, which could be further extended by decreasing the noise of the device and the interface electronics.