Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.

The paper presents basic approaches in designing and growing by molecular beam epitaxy of (Zn,Mg)(S,Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets or ZnCdSe quantum wells...

We report on single-photon emitters for the telecommunication O-band (1260–1360 nm), which comprise an InAs/(In)GaAs quantum dot with asymmetric barriers, placed inside a semiconductor tapered nanocolumn acting as a photonic nanoantenna. The implemented design of the barriers provides a shift in the quantum dot radiation wavelength towards the O-band, while the nanoantenna collects the radiation and ensures its effective output. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 10 MHz with the second-order correlation function $g^{\left(2\right)}$(0) = 0.18 at 8 K.

Heterostructures with InAs/InGaAs quantum dots grown by molecular beam epitaxy on the surface of InGaAs metamorphic buffer layers with a linearly graded composition profile on GaAs(001) substrates have been studied by X-ray diffraction, transmission electron microscopy, and, upon the growth of an additional quantum-dot layer on the surface of the structure, by atomic force microscopy. The tendency to the formation of quantum objects elongated along the [1–10] direction (so-called quantum dashes), caused by asymmetry in the surface migration of In along different crystallographic directions, is confirmed. It is established that the surface density of both quantum dots and quantum dashes is as high as (2‒4) × 10¹⁰ cm^–2. At the same time, narrow lines associated with emission from individual quantum dots are observed in the spectra of low-temperature (T = 10 K) microphotoluminescence in a wide wavelength range (1.30–1.55 µm). The size and shape of quantum dots have been estimated from atomic-force microscopy and transmission electron microscopy data and good agreement with the previously reported parameters is demonstrated.