A new generation of sensors can be engineered based on the sensing of several markers to satisfy the conditions of the multimodal detection principle. From this point of view, photoacoustic-based sensing approaches are essential. The photoacoustic effect relies on the generation of light-induced deformation (pressure) perturbations in media, which is essential for sensing applications since the photoacoustic response is formed due to a contrast in the optical, thermal, and acoustical properties. It is also particularly important to mention that photoacoustic light-based approaches are flexible enough for the measurement of thermal/elastic parameters. Moreover, the photoacoustic approach can be used for imaging and visualization in material research and biomedical applications. The advantages of photoacoustic devices are their compact sizes and the possibility of on-site measurements, enabling the online monitoring of material parameters. The latter has significance for the development of various sensing applications, including biomedical ones, such as monitoring of the biodistribution of biomolecules. To extend sensing abilities and to find reliable measurement conditions, one needs to clearly understand all the phenomena taking place during energy transformation during photoacoustic signal formation. Therefore, the current paper is devoted to an overview of the main measurement principles used in the photoacoustic setup configurations, with a special focus on the key physical parameters.

Hydrogen generation rate is one of the most important parameters which must be considered for the development of engineering solutions in the field of hydrogen energy applications. In this paper, the kinetics of hydrogen generation from oxidation of hydrogenated porous silicon nanopowders in water are analyzed in detail. The splitting of the Si-H bonds of the nanopowders and water molecules during the oxidation reaction results in powerful hydrogen generation. The described technology is shown to be perfectly tunable and allows us to manage the kinetics by: (i) varying size distribution and porosity of silicon nanoparticles; (ii) chemical composition of oxidizing solutions; (iii) ambient temperature. In particular, hydrogen release below 0 °C is one of the significant advantages of such a technological way of performing hydrogen generation.

We present results on the photothermal (PT) and heat conductive properties of nanogranular silicon (Si) films synthesized by evaporation of colloidal droplets (drop-casting) of 100 ± 50 nm-sized crystalline Si nanoparticles (NP) deposited on glass substrates. Simulations of the absorbed light intensity and photo-induced temperature distribution across the Si NP films were carried out by using the Finite difference time domain (FDTD) and finite element mesh (FEM) modeling and the obtained data were compared with the local temperatures measured by micro-Raman spectroscopy and then was used for determining the heat conductivities $k$ in the films of various thicknesses. The cubic-to-hexagonal phase transition in Si NP films caused by laser-induced heating was found to be heavily influenced by the film thickness and heat-conductive properties of glass substrate, on which the films were deposited. The $k$ values in drop-casted Si nanogranular films were found to be in the range of lowest $k$ of other types of nanostructurely voided Si films due to enhanced phonon scattering across inherently voided topology, weak NP-NP and NP-substrate interface bonding within nanogranular Si films.

Today, hydrogen is already widely regarded as up-and-coming source of energy. It is essential to meet energy needs while reducing environmental pollution, since it has a high energy capacity and does not emit carbon oxide when burned. However, for the widespread application of hydrogen energy, it is necessary to search new technical solutions for both its production and storage. A promising effective and cost-efficient method of hydrogen generation and storage can be the use of solid materials, including nanomaterials in which chemical or physical adsorption of hydrogen occurs. Focusing on the recommendations of the DOE, the search is underway for materials with high gravimetric capacity more than 6.5% wt% and in which sorption and release of hydrogen occurs at temperatures from −20 to +100 °C and normal pressure. This review aims to summarize research on hydrogen generation and storage using silicon nanostructures and silicon composites. Hydrogen generation has been observed in Si nanoparticles, porous Si, and Si nanowires. Regardless of their size and surface chemistry, the silicon nanocrystals interact with water/alcohol solutions, resulting in their complete oxidation, the hydrolysis of water, and the generation of hydrogen. In addition, porous Si nanostructures exhibit a large internal specific surface area covered by SiH_x bonds. A key advantage of porous Si nanostructures is their ability to release molecular hydrogen through the thermal decomposition of SiHx groups or in interaction with water/alkali. The review also covers simulations and theoretical modeling of H₂ generation and storage in silicon nanostructures. Using hydrogen with fuel cells could replace Li-ion batteries in drones and mobile gadgets as more efficient. Finally, some recent applications, including the potential use of Si-based agents as hydrogen sources to address issues associated with new approaches for antioxidative therapy. Hydrogen acts as a powerful antioxidant, specifically targeting harmful ROS such as hydroxyl radicals. Antioxidant therapy using hydrogen (often termed hydrogen medicine) has shown promise in alleviating the pathology of various diseases, including brain ischemia–reperfusion injury, Parkinson’s disease, and hepatitis.

Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si:H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.