Solar energy conversion through photoelectrochemical water splitting (PEC) is an upcoming promising technique. MoS2/CoTe heterostructures were successfully prepared and utilized for PEC studies. MoS2 and CoTe were prepared by a hydrothermal method which were then ultrasonicated with wt. % ratios of 1:3, 1:1 and 3:1 to prepare MoS2/CoTe (1:3), MoS2/CoTe (1:1) and MoS2/CoTe (3:1) heterostructure, respectively. The pure materials and heterostructures were characterized by XRD, UV–vis-DRS, SEM, XPS, PL and Raman spectroscopy. Photoelectrochemical measurements were carried out by linear sweep voltammetry and electrochemical impedance spectroscopic measurements. A maximum photocurrent density of 2.791 mA/cm2 was observed for the MoS2/CoTe (1:1) heterojunction which is about 11 times higher than the pristine MoS2. This current density was obtained at an applied bias of 0.62 V vs. Ag/AgCl (1.23 V vs. RHE) under the light intensity of 100 mW/cm2 of AM 1.5G illumination. The enhanced photocurrent density may be attributed to the efficient electron–hole pair separation. The solar to hydrogen conversion efficiency was found to be 0.84% for 1:1 MoS2/CoTe, signifying the efficient formation of the p-n junction. This study offers a novel heterojunction photocatalyst, for PEC water splitting.
Antibiotics have been extensively used over the last few decades. Due to their extensive usage and persistence in the environment, they are considered as emergent pollutants. It is, therefore, important to synthesize new materials for efficient antibiotic degradation. Herein, we report the MoS2/ZnSe heterostructures prepared by a simple ultrasonication method. Heterostructures were prepared with different ratios of MoS2 and ZnSe, i.e., 1:3, 1:1 and 3:1. Characterization of the heterostructures was done by UV-vis diffused reflectance spectroscopy (UV-vis-DRS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and photoluminescence (PL) techniques to understand the morphology and surface chemistry. The results show that an efficient interface was formed to harness the visible light and degrade levofloxacin, which was monitored by gradual decreases in the UV-vis absorbance signal of levofloxacin. Among the prepared heterostructures and their pure counter parts, MoS2/ZnSe 3:1 (3:1 MZ) showed a better degradation activity of 73.2% as compared to pure MoS2 (29%) and ZnSe (17.1%) in the presence of visible light in a time span of two hours. The reusability studies showed that the catalytic performance of 3:1 MZ did not decrease significantly after three cycles. Moreover, the morphology and the crystal structure also remained unchanged.
This research aims to synthesize the Bis(di-isobutyldithiophosphinato) nickel (II) complex [Ni(iBu2PS2)] to be employed as a substrate for the deposition of nickel sulfide nanostructures, and to investigate its dielectric and impedance characteristics for applications in the electronic industry. Various analytical tools including elemental analysis, mass spectrometry, IR, and TGA were also used to further confirm the successful synthesis of the precursor. NiS nanostructures were grown on the glass substrates by employing an aerosol assisted chemical vapor deposition (AACVD) technique via successful decomposition of the synthesized complex under variable temperature conditions. XRD, SEM, TEM, and EDX methods were well applied to examine resultant nanostructures. Dielectric studies of NiS were carried out at room temperature within the 100 Hz to 5 MHz frequency range. Maxwell-Wagner model gave a complete explanation of the variation of dielectric properties along with frequency. The reason behind high dielectric constant values at low frequency was further endorsed by Koops phenomenological model. The efficient translational hopping and futile reorientation vibration caused the overdue exceptional drift of ac conductivity (σac) along with the rise in frequency. Two relaxation processes caused by grains and grain boundaries were identified from the fitting of a complex impedance plot with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb). Asymmetry and depression in the semicircle having center present lower than the impedance real axis gave solid justification of dielectric behavior that is non-Debye in nature.