In this work, the inverted micro-Stereolithography (SLA) is used to show the potential of such additive manufacturing (AM) technology at prototyping super-shaped dielectric resonator antennas (S-DRAs) rapidly and accurately. The S-DRAs, which exhibit 3D complex geometries, were designed to operate at 3.5 GHz, suitable for the assessment of 5G communications in the mid band. Initially, a cross-starred-shaped S-DRA was designed and manufactured via the inverted micro-SLA by means of a photopolymer resin as material. As no information about the used material was available from literature and supplier, the dielectric properties of the photopolymer resin were characterized. Moreover, in the view of challenging further the SLA capability, several prototypes, based on the cross star shaped geometry but exhibiting a twist of variable angles along the longitudinal axis, were fabricated and tested. In order to compare the antennas performance in relation to the material volume and sizes, rectangular and cylindrical DRAs were also realized using same material and technology. Scattering parameter S11, gain, bandwidth (BW), efficiency and co- and cross-polarization of all antennas were measured. The experimental results showed that twisted S-DRAs exhibit same performance of the basic cross-starred-shaped antenna, due to the invariance to symmetry of the basic Gielis geometry. The measured gain is about 2.5 dB over a range of 1 GHz in the frequency range of interest; the BW measured for all S-DRAs is about 10%, whereas the efficiency is about 80% at 3.5 GHz. Finally, better performance in terms of bandwidth is shown by the S-DRAs, considering their dramatic volume reduction (~85%) compared to classic rectangular and cylindrical DRAs and other DRA examples already reported in the state of the art.

Full exploitation of the intrinsic fast timing capabilities of analog silicon photomultipliers (SiPMs) requires suitable front-end electronics. Even a parasitic inductance of a few nH, associated to the interconnections between the SiPM and the preamplifier, can significantly degrade the steepness of the detector response, thus compromising the timing accuracy. In this work, we propose a simple analytic expression for the single-photon response of a SiPM coupled to the front-end electronics, as a function of the main parameters of the detector and the preamplifier, taking into account the parasitic inductance. The model is useful to evaluate the influence of each parameter of the system on the slope of its response and to guide the designer in the definition of the architecture and the specifications for the front-end electronics. The results provided by the model have been successfully compared with experimental measurements from a front-end circuit with variable configuration based on a bipolar junction transistor (BJT), coupled to a 3 × 3 mm² SiPM stimulated by a fast-pulsed laser source.