Mn-Co-Ni-O (MCN) spinel oxide material, a very important transition metal oxide (TMO) with the best application prospects in information and energy fields, was discovered over five decades ago, but its applications have been impeded by the quality of its films due to the magnitude of deposition challenge. Here we report that high quality of MCN nanofilms can be achieved by sputtering deposition via acetate precursors whose decomposition temperatures are matched to the initial synthesis temperature of the MCN thin films. Excellent performance of MCN nanofilms is demonstrated, combining for the first time preferred orientation, high temperature coefficient of resistance and moderate resistivity. The film devices show an intrinsic recombination with a much faster rate of the order of a microsecond for the laser-pumped carriers, which is ~3 orders of magnitude larger compared with that of the ceramic material. The electronic structure of the thin films confirms that it is indeed of n-type nature, exhibiting appropriate electronic states consistent with the levels of metal electrodes and semiconductors. The results offer a vital avenue for depositing high performance TMO thin films for advanced oxide devices and will have great significance for exploiting new applications in modern oxide electronics and optoelectronics.

Ultrabroadband photodetection is of great significance in numerous cutting‐edge technologies including imaging, communications, and medicine. However, since photon detectors are selective in wavelength and thermal detectors are slow in response, developing high performance and ultrabroadband photodetectors is extremely difficult. Herein, one demonstrates an ultrabroadband photoelectric detector covering visible, infrared, terahertz, and millimeter wave simultaneously based on single metal–Te–metal structure. Through the two kinds of photoelectric effect synergy of photoexcited electron–hole pairs and electromagnetic induced well effect, the detector achieves the responsivities of 0.793 A W⁻¹ at 635 nm, 9.38 A W⁻¹ at 1550 nm, 9.83 A W⁻¹ at 0.305 THz, 24.8 A W⁻¹ at 0.250 THz, 87.8 A W⁻¹ at 0.172 THz, and 986 A W⁻¹ at 0.022 THz, respectively. It also exhibits excellent polarization detection with a dichroic ratio of 468. The excellent performance of the detector is further verified by high‐resolution imaging experiments. Finally, the high stability of the detector is tested by long‐term deposition in air and high‐temperature aging. The strategy provides a recipe to achieve ultrabroadband photodetection with high sensitivity and fast response utilizing full photoelectric effect.

Millimeter and terahertz wave photodetectors have long been of great interest due to a wide range of applications, but they still face challenges in detection performance. Here, we propose a new strategy for the direct detection of millimeter and terahertz wave photons based on localized surface-plasmon-polariton (SPP)-induced non-equilibrium electrons in antenna-assisted subwavelength ohmic metal–semiconductor–metal (OMSM) structures. The subwavelength OMSM structure is used to convert the absorbed photons into localized SPPs, which then induce non-equilibrium electrons in the structure, while the antenna increases the number of photons coupled into the OMSM structure. When the structure is biased and illuminated, the unidirectional flow of the SPP-induced non-equilibrium electrons forms a photocurrent. The energy of the detected photons is determined by the structure rather than the band gap of the semiconductor. The detection scheme is confirmed by simulation and experimental results from the devices, made of gold and InSb, and a room temperature noise equivalent power (NEP) of 1.5 × 10⁻¹³ W Hz^−1/2 is achieved.

In this paper, we design a metasurface terahertz perfect absorber with multi-frequency selectivity and good incident angle compatibility using a double-squared open ring structure. Simulations reveal five selective absorption peaks located at 0-1.2 THz with absorption 94.50% at 0.366 THz, 99.99% at 0.507 THz, 95.65% at 0.836 THz, 98.80% at 0.996 THz, and 86.70% at 1.101 THz, caused by two resonant absorptions within the fundamental unit (fundamental mode of resonance absorption, FRA) and its adjacent unit (supermodel of resonance absorption, SRA) in the structure, respectively, when the electric field of the electromagnetic wave is incident perpendicular to the opening. The strong frequency selectivity at 0.836 THz with a Q-factor of 167.20 and 0.996 THz with a Q-factor of 166.00 is due to the common effect of the FRA and SRA. Then, the effect of polarized electromagnetic wave modes (TE and TM modes) at different angles of incidence (θ) and the size of the open rings on the device performance is analyzed. We find that for the TM mode, the absorption of the resonance peak changes only slightly at θ = 0-80°, which explains this phenomenon. The frequency shift of the absorption peaks caused by the size change of the open rings is described reasonably by an equivalent RLC resonant circuit. Next, by adjusting two-dimensional materials and photosensitive semiconductor materials embedded in the unit structure, the designed metasurface absorber has excellent tunable modulation. The absorption modulation depth (MD) reaches ≈100% using the conductivity of photosensitive semiconductor silicon (σ_SI-ps), indicating excellent control of the absorption spectrum. Our results can greatly promote the absorption of terahertz waves, absorption spectrum tunability, and frequency selectivity of devices, which are useful in the applications such as resonators, bio-detection, beam-controlled antennas, hyperspectral thermal imaging systems, and sensors.