The crystal structural quality and the strain induced by the substrate strictly impose the magnetic and transport properties of La _0.67 Sr _0.33 MnO ₃ (LSMO) films. In particular, the magnetic anisotropy (MA) of epitaxial LSMO can be finely tuned by varying its thickness and by choosing single crystal substrates with a suitable lattice mismatch with the film. Here, we have deposited LSMO films with thicknesses in the 12–50 nm range by pulsed laser deposition on different single crystal substrates inducing either compressive or tensile in-plane strain on the manganites. The epitaxial quality of films was quantified by ω-scans around a (002) peak with full-width half-maximum values as low as 0.08° for films on the nearly matched NGO (110) substrate to 1.4° films on the high mismatched MgO (001) substrate. As the epitaxial strain in a thin-film increases, a significant reduction in the metal-insulation transition temperature (T _p ) was observed. The magnetic properties of the films probed by Kerr magnetometry show that the symmetry of the room temperature MA varies significantly as a function of both strain and thickness. Specifically, we observed pure uniaxial MA on NGO (110) and pure biaxial MA on STO buffered MgO (001), whereas a spin reorientation from uniaxial in-plane to out-of-plane on LSAT (001) and uniaxial to nearly isotropic in-plane on STO (001) substrate as the film thickness is increased. We provide an efficient tool to tune the MA according to the specific spintronic application targeted.

Quantum materials are central for the development of novel functional systems that are often based on interface specific phenomena. Fabricating controlled interfaces between quantum materials requires adopting a flexible growth technique capable to synthesize different materials within a single-run deposition process with high control of structure, stoichiometry, and termination. Among the various available thin film growth technologies, pulsed laser deposition (PLD) allows controlling the growth of diverse materials at the level of single atomic layers. In PLD the atomic species are supplied through an ablation process of a stoichiometric target either in form of polycrystalline powders or of a single crystal. No carrier gases are needed in the deposition process. The ablation process is compatible with a wide range of background pressure. We present results of thin-film growth by PLD obtained by using an Nd:YAG infrared pulsed laser source operating at its first harmonics. With respect to the traditional PLD systems—based on excimer KrF UV-lasers—optimal conditions for the growth of thin films and heterostructures are reached at large target-to-substrate distance. Merits and limitations of this approach for growing oxide and non-oxide thin films are discussed. The merits of an Nd:YAG laser to grow very high-quality thin films suggest the possibility of implementing compact in-situ setups e.g. integrated with analytical instrumentation under ultra-high vacuum conditions.

Topological insulators are materials with time-reversal symmetric states of matter in which an insulating bulk is surrounded by protected Dirac-like edge or surface states. Among topological insulators, ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ has attracted special attention due to its simple surface band structure and its relatively large band gap that should enhance the contribution of its surface to transport, which is usually masked by the appearance of defects. In order to avoid this difficulty, several features characteristic of topological insulators in the quantum regime, such as the weak-antilocalization effect, can be explored through magnetotransport experiments carried out on thin films of this material. Here, we review the existing literature on the magnetotransport properties of ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ thin films, paying thorough attention to the weak-antilocalization effect, which is omnipresent no matter the film quality. We carefully follow the different situations found in reported experiments, from the most ideal situations, with a strong surface contribution, towards more realistic cases where the bulk contribution dominates. We have compared the transport data found in literature to shed light on the intrinsic properties of ${\mathrm{Bi}}_2{\mathrm{Se}}_3$, finding a clear relationship between the mobility and the phase coherence length of the films that could trigger further experiments on transport in topological systems.

The structural, electronic, and magnetic properties of Sr-hole-doped epitaxial La_1-x Sr _x MnO₃ (0.15 ≤ x ≤ 0.45) thin films deposited using the molecular beam epitaxy technique on 4° vicinal STO (001) substrates are probed by the combination of X-ray diffraction and various synchrotron-based spectroscopy techniques. The structural characterizations evidence a significant shift in the LSMO (002) peak to the higher diffraction angles owing to the increase in Sr doping concentrations in thin films. The nature of the LSMO Mn mixed-valence state was estimated from X-ray photoemission spectroscopy together with the relative changes in the Mn L_2,3 edges observed in X-ray absorption spectroscopy (XAS), both strongly affected by doping. CTM4XAS simulations at the XAS Mn L_2,3 edges reveal the combination of epitaxial strain, and different MnO₆ crystal field splitting give rise to a peak at ∼641 eV. The observed changes in the occupancy of the e_g and the t_2g orbitals as well as their binding energy positions toward the Fermi level with hole doping are discussed. The room-temperature magnetic properties were probed at the end by circular dichroism.

The properties of half-metallic manganite thin films depend on the composition and structure in the atomic scale, and consequently, their potential functional behavior can only be based on fine structure characterization. By combining advanced transmission electron microscopy, electron energy loss spectroscopy, density functional theory calculations, and multislice image simulations, we obtained evidence of a 7 nm-thick interface layer in La_0.7Sr_0.3MnO₃ (LSMO) thin films, compatible with the formation of well-known dead layers in manganites, with an elongated out-of-plane lattice parameter and structural and electronic properties well distinguished from the bulk of the film. We observed, for the first time, a structural shift of Mn ions coupled with oxygen vacancies and a reduced Mn valence state within such layer. Understanding the correlation between oxygen vacancies, the Mn oxidation state, and Mn-ion displacements is a prerequisite to engineer the magnetotransport properties of LSMO thin films.