The magnetoresistance (MR) effect is widely used in technologies that pervade the world, from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin‐Hall, are revealed in materials depending on the specific system and measuring configuration. Half‐metallic manganites hold promise for spintronic applications but the complexity of competing interactions has not permitted the understanding and control of their magnetotransport properties to enable the realization of their technological potential. This study reports on the ability to induce a dominant switchable magnetoresistance in La_0.7Sr_0.3MnO₃ epitaxial films at room temperature (RT). By engineering an extrinsic magnetic anisotropy, a large enhancement of anisotropic magnetoresistance (AMR) is achieved which at RT leads to signal changes much larger than the other contributions such as the colossal magnetoresistance. The dominant extrinsic AMR exhibits large variation in the resistance in low field region, showing high sensitivity to applied low magnetic fields. These findings have a strong impact on the real applications of manganite‐based devices for the high‐resolution low field magnetic sensors or spintronics.

Narrow ${\mathrm{YBa}}_2{\mathrm{Cu}}_3{\mathrm{O}}_7$ films, excited by pulses of supercritical current, had their nanosecond electric response monitored in zero applied magnetic field. Delayed voltage steps plus constant differential resistance, characteristic of phase-slip centers (PSC), are observed at all temperatures. The duration of the initial zero voltage state is well fit by Ginzburg-Landau based theories, with a gap relaxation time controlled by phonon escape. At higher levels of excitation, PSC's give birth to slowly spreading normal hot spots.

We present a detailed study on the magnetic properties, including anisotropy, reversal fields, and magnetization reversal processes, of well characterized half-metallic epitaxial La0.7Sr0.3MnO3 (LSMO) thin films grown onto SrTiO3 (STO) substrates with three different surface orientations, i.e., (001), (110), and (11−8). The latter shows step edges oriented parallel to the [110] (in-plane) crystallographic direction. Room temperature high resolution vectorial Kerr magnetometry measurements have been performed at different applied magnetic field directions in the whole angular range. In general, the magnetic properties of the LSMO films can be interpreted with just the uniaxial term, with the anisotropy axis given by the film morphology, whereas the strength of this anisotropy depends on both structure and film thickness. In particular, LSMO films grown on nominally flat (110)-oriented STO substrates presents a well defined uniaxial anisotropy originated from the existence of elongated in-plane [001]-oriented structures, whereas LSMO films grown on nominally flat (001)-oriented STO substrates show a weak uniaxial magnetic anisotropy, with the easy axis direction aligned parallel to residual substrate step edges. Elongated structures are also found for LSMO films grown on vicinal STO(001) substrates. These films present a well-defined uniaxial magnetic anisotropy, with the easy axis lying along the step edges, and its strength increases with the LSMO thickness. It is remarkable that this step-induced uniaxial anisotropy has been found for LSMO films up to 120 nm thickness. Our results are promising for engineering novel half-metallic magnetic devices that exploit tailored magnetic anisotropy.

High crystalline quality of ultra-thin NbN layers and of NbN-MgO-NbN tri-layers, epitaxially grown by DC-magnetron sputtering in the superconducting B1-cubic phase has been achieved in a reproducible way on three different orientations of sapphire substrates i.e. R-, A- and M-planes. Significant improvements such as higher Tc, higher Jc and lower resistivity have been obtained by growing un-twined (110) oriented NbN layers on M-plane orientation of sapphire. Uniform, low roughness, 3-5 nm thick films with Tc above 12 K and Jc above 5 MA/cm² at 4.2 K were obtained. Characterizations by TEM, AFM and X-Ray diffraction evidence that growth of un-twined NbN on M-plane lead to a better epitaxy in comparison with twinned films observed on other sapphire orientations. We observe that the reduction of the substrate temperature from 600degC to 300degC during the deposition of NbN or NbN-MgO-NbN layers thicker than 20 nm prevents the nucleation of the competing HCP NbN phase. Moreover, 1.5 nm thick AlN or MgO over-layers sputtered in-situ prevent ultra-thin NbN films degradation through aging. The formation of Nb₂N_yO_5-x ( ~ 2.2 nm) at the unprotected NbN surface and of interfacial NbO ( ~ 0.7 nm) native oxides has been observed by XPS. It is forecasted that such improvements in ultra-thin NbN films deposited uniformly on 3 and 4 inch sapphire wafers is a key in the future development of superconducting single photon detectors, THz HEB mixers and also in low noise quantum analogical and digital Josephson devices.

We found that the current–voltage characteristics measured on ${\mathrm{La}}_{0.66}{\mathrm{Sr}}_{0.33}{\mathrm{MnO}}_3∕{\mathrm{YBa}}_2{\mathrm{Cu}}_3{\mathrm{O}}_{7-\delta }$ thin film heterostructures patterned as microbridges are nonsymmetric if the magnetization direction of the ${\mathrm{La}}_{0.66}{\mathrm{Sr}}_{0.33}{\mathrm{MnO}}_3$ film is in plane and perpendicular to the current direction. This effect is attributed to the contribution of the magnetic moment of this film to the vertical component of the field along the edges of the bridge. We suggest that this effect could find an application in the reading process of magnetic memories.

Superlattices composed of ferromagnetics, namely ${\mathrm{La}}_{0.7}{\mathrm{Ca}}_{0.3}{\mathrm{MnO}}_3$ (LCMO), and ferroelectrics, namely, ${\mathrm{BaTiO}}_3$ (BTO), were grown on ${\mathrm{SrTiO}}_3$ at 720 °C by a pulsed laser deposition process. While the out-of-plane lattice parameters of the superlattices, as extracted from the x-ray diffraction studies, were found to be dependent on the BTO layer thickness, the in-plane lattice parameter is almost constant. The evolution of the strains, their nature, and their distribution in the samples were examined by the conventional ${\sin }^2\psi$ method. The effects of structural variation on the physical properties, as well as the possible role of the strain on inducing the multiferroism in the superlattices, have also been discussed.