The electrical conductivity of extrinsically conducting polymer composite systems passes through a transition state known as percolation threshold. A discussion has been made on how different Sigmoidal models (S-models), such as Sigmoidal–Boltzmann (SB), Sigmoidal–Dose Response (SD), Sigmoidal–Hill (SH), Sigmoidal–Logistic (SL), and Sigmoidal–Logistic-1 (SL-1), can be applied to predict the percolation threshold of electrical conductivity for ethylene vinyl acetate copolymer (EVA) and acrylonitrile butadiene copolymer (NBR) conducting composite systems filled with different carbon fillers. An interesting finding that comes from these observations is that the percolation threshold for electrical conductivity determined by SB and SD models are similar, whereas, the other models give different result when estimated for a particular composite system. This similarity and discrepancy in the results of percolation threshold have been discussed by considering the strength, weakness, and limitation of the models. The percolation threshold value for the composites has also been determined using the classical percolation theory and compared with the sigmoidal models. Moreover, to check the universal applicability, these Sigmoidal models have also been tested on results from some published literature. Finally, it is revealed that, except SL-1 model, the remaining models can successfully be used to determine the percolation threshold of electrical conductivity for extrinsically conductive polymer composites.

We extend our work on the use of digitally controlled pulsed laser plasma deposition (PLPD) technique to synthesize high quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temperature for applications in high-performance deep UV photodetectors. The obtained sample consists of a large amount of BNNSs partially overlapping one another with random orientations. Each sheet is composed of a few (from 2 to 10) stacked atomic layers exhibiting high transparency due to its highly ordered hBN crystallinity. Deep UV detectors based on the obtained BNNSs were designed, fabricated, and tested. The bias and temperature effects on the photocurrent strength and the signal-to-noise ratio have been carefully characterized and discussed. A significant shift in the cut off wavelength of the BNNSs based photodetectors was observed suggesting a band gap reduction as a result of the BNNSs’ collective structure. The newly designed photodetector presented exceptional properties: a high sensitivity to weak intensities of radiation in both UVC and UVB range while remaining visible-blind, and a high signal-to-noise ratio operation even at temperatures as high as 400 °C. In addition, the BNNSs based photodetector exhibited potential for self-powered operation.

We report on the synthesis and characterization of hexagonal boron nitride nanosheets (BNNSs) for deep ultraviolet (DUV) photodetector applications. The vertical structure metal-semiconductor-metal (MSM) solar-blind DUV photodetector based on BNNSs has been fabricated and tested. The detector performance is stable under UV radiation at temperatures exceeding 100°C. The bandgap engineered material has a cutoff wavelength of approximately 250 nm and does not respond to any longer wavelength or visible light. The photodetector demonstrates the advantages of hexagonal BNNSs as a wide band gap material for DUV detection in harsh environments.

High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were grown on silicon wafers by using pulsed plasma beam deposition techniques. Self-powered deep ultraviolet (DUV) photodetectors (PDs) based on BNNSs with Schottky contact structures are designed and fabricated. By connecting the fabricated DUV photodetector to an ammeter, the response strength, response time and recovery time to different DUV wavelengths at different intensities have been characterized using the output short circuit photocurrent without a power supply. Furthermore, effects of temperature and plasma treatment on the induced photocurrent response of detectors have also been investigated. The experimental data clearly indicate that plasma treatment would significantly improve both induced photocurrent and response time. The BNNS-based DUV photodetector is demonstrated to possess excellent performance at a temperature up to 400 °C, including high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability, which is better than almost all reported semiconducting nanomaterial-based self-powered photodetectors.

We report the studies of (1) the basic mechanism underlying the formation of defect-free, single crystalline boron nitride nanosheets (BNNSs) synthesized using pulsed laser plasma deposition (PLPD) technique, (2) the variation in the crystalline structure at the edges of the hexagonal boron nitride (h-BN) nanosheets and (3) the basic electrical properties related to the BNNSs tunneling effect and electrical breakdown voltage. The nanoscale morphologies of BNNSs are characterized using scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM). The results show that each sample consisted of a number of transparent BNNSs that partially overlapped one another. Varying the deposition duration yielded different thicknesses of sample but did not affect the morphology, structure and thickness of individual BNNSs pieces. Analysis of the SEM and HRTEM data revealed changes in the spatial period of the B₃–N₃ hexagonal structures and the interlayer distance at the edge of the BNNSs, which occurred due to the limited number of atomic layers and was confirmed further by x-ray diffraction (XRD) study. The experimental results clearly indicate that the values of the electrical conductivities of the super-thin BNNSs and the effect of temperature relied strongly on the direction of observation.