Background: In a noticeable percentage of patients anterolateral rotational instabilities (ALRI) remain after an isolated ACL reconstruction. Those instabilities may occur due to an insufficiently directed damage of anterolateral structures that is often associated with ACL ruptures. Recent publications describe an anatomical structure, termed the anterolateral ligament (ALL), and suggest that this ligament plays a significant role in the pathogenesis of ALRI of the knee joint. However, only limited knowledge about the biomechanical characteristics and tensile properties of the anterolateral ligament exists.Methods: The anterolateral ligament was dissected in four fresh‐frozen human cadaveric specimens and all surrounding tissue removed. The initial length of the anterolateral ligament was measured using a digital caliper. Tensile tests with load to failure were performed using a materials testing machine. The explanted anterolateral ligaments were histologically examined to measure the cross‐sectional area.Results: The mean ultimate load to failure of the anterolateral ligament was 49.90 N (± 14.62 N) and the mean ultimate strain was 35.96% (± 4.47%). The mean length of the ligament was 33.08 mm (± 2.24) and the mean cross‐sectional area was 1.54 mm2 (± 0.48 mm2). Including the areal measurements the maximum tension was calculated to be 32.78 (± 4.04 ).Conclusions: The anterolateral ligament is an anatomical structure with tensile properties that are considerably weaker compared to other peripheral structures of the knee. Knowledge of the anterolateral ligament’s tensile strengths may help to better understand its function and with graft choices for reconstruction procedures.
1 February 2005 in Sensors and Actuators B: Chemical
Polymeric structures with integrated, functional microelectrical mechanical systems (MEMS) elements are increasingly important in various applications such as biomedical systems or wearable smart devices. These applications require highly flexible and elastic polymers with good conductivity, which can be embedded into a matrix that undergoes large deformations. Conductive polydimethylsiloxane (PDMS) is a suitable candidate but is still challenging to fabricate. Conductivity is achieved by filling a nonconductive PDMS matrix with conductive particles. In this work, we present an approach that uses new mixing techniques to fabricate conductive PDMS with different fillers such as carbon black, silver particles, and multiwalled carbon nanotubes. Additionally, the electrical properties of all three composites are examined under continuous mechanical stress. Furthermore, we present a novel, low-cost, simple three-step molding process that transfers a micro patterned silicon master into a polystyrene (PS) polytetrafluoroethylene (PTFE) replica with improved release features. This PS/PTFE mold is used for subsequent structuring of conductive PDMS with high accuracy. The non sticking characteristics enable the fabrication of delicate structures using a very soft PDMS, which is usually hard to release from conventional molds. Moreover, the process can also be applied to polyurethanes and various other material combinations.
We report on the realization of a chip-based multipole ion trap manufactured using microelectromechanical systems technology, requiring minimal manual alignment of the electrodes. It provides ion confinement in an almost field-free volume between two planes of radiofrequency electrodes, deposited on glass substrates, which allows for optical access to the trap. An analytical model of the effective trapping potential is presented and compared with numerical calculations. Stable trapping of argon ions is achieved, and a lifetime of 16 s is measured. Electrostatic charging of the chip surfaces is studied and found to agree with a numerical estimate.
In this paper, we present an innovative manufacturing process for the production of capacitive pressure and force sensors with excellent thermal stability for high-temperature applications. The sensors, which are manufactured from a stack of two silicon chips mounted via with gold–silicon (Au-Si) or aluminum–silicon (Al-Si) eutectic bonding, are shielded, miniaturized, and allow an operating temperature of up to 500 °C. Compared to conventional methods, the greatest benefit of the manufacturing process is that different sensor dimensions can be produced in the same batch for a wide measuring range, from mN to kN. The characterization of the realized sensors shows a high linearity and a low temperature drift of 99.992% FS and −0.001% FS/K at 350 °C, as well as a nonlinearity of 0.035% FS and a temperature drift of −0.0027% FS/K at 500 °C.