Hui Shen

Prof. Dr. Hui Shen

School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, China
orcid

Research Focus & Metrics

Academic Career Length

12Years (2015-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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27 July 2023 in Journal of Rare Earths
Verified
Journal Article
Closed access
YFYating Fang
Yating Fang
Hui ShenHui Shen
Hui Shen
YMYudie Ma
Yudie Ma
SLShijie Liao
Shijie Liao
SXShuang Xia
Shuang Xia
JXJiayue Xu
Jiayue Xu

16 February 2024 in Journal of Crystal Growth
Verified
Journal Article
Closed access
Hui ShenHui Shen
Hui Shen
YZYu Zhao
Yu Zhao
LLLeifan Li
Leifan Li
QLQixin Li
Qixin Li
HGHeyan Geng
Heyan Geng
AWAnhua Wu
Anhua Wu

4 August 2015 in Journal of Sol-Gel Science and Technology
Verified
Journal Article
Closed access
PDF file
WLWei Li
Wei Li
Hui ShenHui Shen
Hui Shen
JXJiayue Xu
Jiayue Xu

9 August 2017 in Crystals
Verified
Journal Article
Open access
PDF file
TTTian Tian
Tian Tian
HFHaiwei Feng
Haiwei Feng
YZYan Zhang
Yan Zhang
DZDing Zhou
Ding Zhou
Hui ShenHui Shen
Hui Shen
JXJiayue Xu
Jiayue Xu
Φ1 inch Dy3+ and Ge4+ co-doped bismuth silicate (Bi4Si3O12, BSO) single crystals with the length of 80–100 mm were successfully grown by Bridgman method. They are transparent, free of cracks and inclusions. The white residual at the top parts of BSO crystals disappears with co-doping 1 mol% Dy3+ and more than 3 mol% Ge4+. The FWHM values of X-ray rocking curves shows 1%Dy,3%Ge:BSO crystal possesses high crystallization quality. The intrinsic emission peak of BSO and the characteristic emission peaks of Dy3+ ions are weakened with increasing the doping concentration of Ge4+. 1 mol% Dy3+ and 3 mol% Ge4+ are the optimal concentrations due to high crystallization quality and moderate emission intensity. The CIE coordinates and CCT values shift towards warmer white light region with increased Ge4+ co-doping. The CCT values are close to the ideal value of 3000 K for warm white light when 1%Dy,3%Ge:BSO crystal is excited by various UV light. Increasing the temperature from 298 K to 573 K leads the luminescence lifetime to decrease from 659 μs to 645 μs. More than 95% and 80% photoluminescence intensity at room temperature is still retained at 423 K and 573 K respectively. Dy,Ge:BSO crystals are potential candidates for fabricating high power warm WLEDs.

19 March 2020 in Journal of Sol-Gel Science and Technology
Verified
Journal Article
Closed access
PDF file
Hui ShenHui Shen
Hui Shen
PFPeng Feng
Peng Feng
GJGuochao Jiang
Guochao Jiang
QXQin Xian
Qin Xian

29 January 2020 in Crystals
Verified
Journal Article
Open access
PDF file
XYXiaodong Yan
Xiaodong Yan
TTTian Tian
Tian Tian
MWMenghui Wang
Menghui Wang
Hui ShenHui Shen
Hui Shen
DZDing Zhou
Ding Zhou
JXJiayue Xu
Jiayue Xu
A series of LiNbO3 crystals doped with various MgO concentrations (0, 3%, and 5 mol%) was simultaneously grown in one furnace by the modified vertical Bridgman method. The wet chemistry method was used to prepare the polycrystalline powders, and the growth conditions were optimized. The full width at half maximum of high-resolution X-ray rocking curves for (001) reflection of 5 mol% Mg doped lithium niobate (LN) crystal was about 8″, which meant it possessed high crystalline quality. The OH− absorption spectra shifted to 3534.7 cm−1, and the UV absorption edge violet shift indicated that 5 mol% MgO successfully doped in LN and exceeded the threshold. The extraordinary refractive index gradient of 5 mol% Mg doped LN crystal was as small as 2.5 × 10−5/cm, which exhibited high optical homogeneity.