Polymer-based magnetoelectric composite materials have attracted a lot of attention due to their high potential in various types of applications as magnetic field sensors, energy harvesting, and biomedical devices. Current researches are focused on the increase in the efficiency of magnetoelectric transformation. In this work, a new strategy of arrangement of clusters of magnetic nanoparticles by an external magnetic field in PVDF and PFVD-TrFE matrixes is proposed to increase the voltage coefficient (α_ME) of the magnetoelectric effect. Another strategy is the use of 3-component composites through the inclusion of piezoelectric BaTiO₃ particles. Developed strategies allow us to increase the α_ME value from ~5 mV/cm·Oe for the composite of randomly distributed CoFe₂O₄ nanoparticles in PVDF matrix to ~18.5 mV/cm·Oe for a composite of magnetic particles in PVDF-TrFE matrix with 5%wt of piezoelectric particles. The applicability of such materials as bioactive surface is demonstrated on neural crest stem cell cultures.

The exchange bias phenomenon in bilayered and trilayered thin films, based on NiFe and IrMn, was studied. The exchange bias and coercivity fields dependences on the antiferromagnetic layer thickness were obtained. It was shown that 6 nm of IrMn is a critical thickness for the exchange bias appearance. Largest value of the exchange bias is found to be for NiFe/IrMn/NiFe sample with 10nm thickness of antiferromagnetic layer

Magnetization reversal processes in the NiFe/FeMn exchange biased structures with various antiferromagnetic layer thicknesses (0–50 nm) and glass substrate temperatures (17–600 °C) during deposition were investigated in detail. Magnetic measurements were performed in the temperature range from 80 K up to 300 K. Hysteresis loop asymmetry was found at temperatures lower than 150 K for the samples with an antiferromagnetic layer thickness of more than 10 nm. The average grain size of FeMn was found to increase with the AFM layer increase, and to decrease with the substrate temperature increase. Hysteresis loop asymmetry was explained in terms of the exchange spring model in the antiferromagnetic layer.

The influence of the antiferromagnetic layer thickness on the magnetic properties of the trilayered thin-film structures with the exchange bias phenomenon was studied in the temperature range from 100 up to 295 K. Dependences of the coercive force and exchange bias field on AF-layer thickness were analyzed for all structures with AF layer thickness from 2 nm up to 50 nm at room and low temperatures. The explanation in terms of the anisotropy and thermal energies competition was given for disclosure of an exchange bias for structures with 2 nm AF layer thickness at low temperatures.