Jun Taniguchi

Dr. Jun Taniguchi

Department of Applied Electronics, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
orcid

Research Focus & Metrics

Academic Career Length

31Years (1996-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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30 September 2006 in Microelectronic Engineering
Verified
Journal Article
Closed access
JTJun Taniguchi
Jun Taniguchi
KKKentaro Koga
Kentaro Koga
YKYasuo Kogo
Yasuo Kogo
IMIwao Miyamoto
Iwao Miyamoto

1 March 2020 in Microelectronic Engineering
Verified
Journal Article
Closed access
RARyota Akama
Ryota Akama
TOTakao Okabe
Takao Okabe
KSKazuyoshi Sato
Kazuyoshi Sato
YIYoshiki Inaba
Yoshiki Inaba
NSNaoki Shikazono
Naoki Shikazono
JTJun Taniguchi
Jun Taniguchi

1 January 2005 in Journal of Photopolymer Science and Technology
Verified
Journal Article
Closed access
NSNobuji Sakai
Nobuji Sakai
JTJun Taniguchi
Jun Taniguchi
KKKenshi Kawaguchi
Kenshi Kawaguchi
MOMakoto Ohtaguchi
Makoto Ohtaguchi
THTamano Hirasawa
Tamano Hirasawa

1 November 2014 in Journal of Vacuum Science & Technology B
Verified
Journal Article
Closed access
MMMasatoshi Moro
Masatoshi Moro
JTJun Taniguchi
Jun Taniguchi
SHShin Hiwasa
Shin Hiwasa
Antireflection (AR) films are useful in preventing the reflection of light from the displays of mobile phones and tablet computers. In particular, films with an AR structure known as the moth-eye structure show excellent performance in preventing light reflection. In a previous study, the authors reported the fabrication of an AR structure by oxygen ion-beam irradiation of glassy carbon (GC). The fabricated pattern consisted of a series of self-assembled conical structures and it had a low-reflection surface. In this study, the authors transferred this AR structure onto a polymer film by roll-to-roll ultraviolet nanoimprint lithography using a replica mold produced from a GC master mold with the AR structure. As a result, the authors were able to produce high-performance AR film at a feed rate of 1.8 m/min. The reflectivity of the film was about 0.1% and its transmittance was about 95% at visible wavelengths.

1 July 2014 in Microelectronic Engineering
Verified
Journal Article
Closed access
YOYuma Otsuka
Yuma Otsuka
SHShin Hiwasa
Shin Hiwasa
JTJun Taniguchi
Jun Taniguchi

17 October 2012 in Journal of Vacuum Science & Technology B
Verified
Journal Article
Closed access
JTJun Taniguchi
Jun Taniguchi
HYHiroshi Yoshikawa
Hiroshi Yoshikawa
GTGo Tazaki
Go Tazaki
TZToshiyuki Zento
Toshiyuki Zento
Roll-to-roll ultraviolet nanoimprint lithography (RTR UV-NIL) has attracted much attention as a high-throughput nanofabrication process. In particular, high-density nanoscale line-and-space (L&S) patterns are widely used for optical devices and printed circuits, such as wire-grid polarizers and transparent electrode films. To realize a simplified high-throughput RTR process, the authors developed a replica roll mold fabrication process and examined the feed speed of RTR UV-NIL. The replica mold was fabricated by applying parallel-plate UV-NIL using a silicon master mold with 100-nm L&S patterns and 200-nm groove depth. Replica molds were coated with 10-nm-thick tungsten and a fluorinated silane coupling agent to prevent the adhesion of UV-curable resin during RTR UV-NIL. The release-coated replica molds were wrapped around roll substrate having a diameter of 150 mm. Using the replica mold, RTR UV-NIL was carried out at different UV doses, which were determined as the product of the UV light intensity and feed speed. The results confirmed that a sufficient UV dose enabled successful pattern transfer, while an insufficient UV dose caused the pattern to break down. In this experiment, a rapid feed speed of 18 m/min was possible under conditions of high UV light intensity. In addition, the release agent was still active after 500 revolutions of the replica roll mold (235.5 m).