In this paper we present that the surface energy of silicon dioxide employed as the dielectric in bottom gate organic field effect transistors has large impact on the device performance. By the use of the zone-casting simple solution processing technique, we ensured reproducibility of active layer preparation confirmed by the atomic force microscopy and x-ray diffraction that showed high crystalline quality. Electrical measurements revealed that charge carrier mobility based on highly ordered zone-cast tetrakis-(octadecylthio)-tetrathiafulvalene layer was increased 30 times to $0.2{\text{cm}}^2/\text{V}\text{s}$ , when dielectric surface energy decreased from 51.8 to 40.1 mN/m.