Dr. Julien Buckley holds a master’s degree in electrical engineering from CentraleSupelec at Université Paris-Saclay and UMPC at Sorbonne University, both obtained in 2003. He received a PhD in microelectronics from Grenoble-INP at Université Grenoble Alpes in 2006. He has been part of CEA-LETI's permanent research engineering staff since 2006. He has been involved in GaN power electronics, photovoltaics, and non-volatile memory activities. His current field of work covers novel GaN device architectures, for which he manages several projects and PhD students. Dr. Buckley is currently an IEEE member and Guest Editor of a Special Issue entitled “Wide Bandgap Technologies for Power Electronics”, published with MDPI.