Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

Summary form only given. Low temperature (<; 160 °C epi temperature) Ge based punch through selector has been demonstrated with good I _on /I _off and matched with TCAD results. High J _on verifies the high dopant activation at low temperature. Benchmarking with the available selector technologies, J _on /J _off >10 ⁴ with voltage designability makes Ge based selector an attractive option for RRAM.