Francesc Perez-Murano

Prof. Dr. Francesc Perez-Murano

Universitat Autònoma de Barcelona, Barcelona, Spain

Research Focus & Metrics

Academic Career Length

37Years (1990-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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15 December 2014 in Nature Physics
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Journal Article
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GLGuillermo López-Polín
Guillermo López-Polín
CGCristina Gómez-Navarro
Cristina Gómez-Navarro
VPVincenzo Parente
Vincenzo Parente
FGFrancisco Guinea
Francisco Guinea
MKMikhail I. Katsnelson
Mikhail I. Katsnelson
JGJulio Gómez-Herrero
Julio Gómez-Herrero

20 August 2007 in Physical Review Letters
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Journal Article
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DGD. Garcia-Sanchez
D. Garcia-Sanchez
APA. San Paulo
A. San Paulo
MEM. J. Esplandiu
M. J. Esplandiu
FPFrancesc Perez-Murano
Francesc Perez-Murano
LFL. Forró
L. Forró
ABA. Bachtold
A. Bachtold
Bending-mode vibrations of carbon nanotube resonators were mechanically detected in air at atmospheric pressure by means of a novel scanning force microscopy method. The fundamental and higher order bending eigenmodes were imaged at up to 3.1 GHz with subnanometer resolution in vibration amplitude. The resonance frequency and the eigenmode shape of multiwall nanotubes are consistent with the elastic beam theory for a doubly clamped beam. For single-wall nanotubes, however, resonance frequencies are significantly shifted, which is attributed to fabrication generating, for example, slack. The effect of slack is studied by pulling down the tube with the tip, which drastically reduces the resonance frequency.

4 May 1998 in Applied Physics Letters
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Ricardo Garcia GarciaRicardo Garcia Garcia
Ricardo Garcia Garcia
Montserrat CallejaMontserrat Calleja
Montserrat Calleja
FPFrancesc Perez-Murano
Francesc Perez-Murano
Local oxidation of silicon surfaces by atomic force microscopy is a very promising lithographic approach at nanometer scale. Here, we study the reproducibility, voltage dependence, and kinetics when the oxidation is performed by dynamic force microscopy modes. It is demonstrated that during the oxidation, tip and sample are separated by a gap of a few nanometers. The existence of a gap increases considerably the effective tip lifetime for performing lithography. A threshold voltage between the tip and the sample must be applied in order to begin the oxidation. The existence of a threshold voltage is attributed to the formation of a water bridge between tip and sample. It is also found that the oxidation kinetics is independent of the force microscopy mode used (contact or noncontact).

1 December 2023 in Applied Physics Reviews
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KHKatja Höflich
Katja Höflich
GHGerhard Hobler
Gerhard Hobler
FAFrances Allen
Frances Allen
TWTom Wirtz
Tom Wirtz
Gemma RiusGemma Rius
Gemma Rius
GHGregor Hlawacek
Gregor Hlawacek
The focused ion beam (FIB) is a powerful tool for fabrication, modification, and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques, and applications. By viewing FIB developments through the lens of various research communities, we aim to identify future pathways for ion source and instrumentation development, as well as emerging applications and opportunities for improved understanding of the complex interplay of ion–solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interest and will support future fruitful interactions connecting tool development, experiment, and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.

21 January 2008 in IEEE Electron Device Letters
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Journal Article
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JVJ. Verd
J. Verd
AUArantxa Uranga
Arantxa Uranga
GAG. Abadal
G. Abadal
JTJ. L. Teva
J. L. Teva
FTFrancesc Torres
Francesc Torres
Nuria BarniolNuria Barniol
Nuria Barniol
This letter presents the design, fabrication, and demonstration of a CMOS/microelectromechanical system (MEMS) electrostatically self-excited resonator based on a submicrometer-scale cantilever with ~1 ag/Hz mass sensitivity. The mechanical resonator is the frequency-determining element of an oscillator circuit monolithically integrated and implemented in a commercial 0.35 mum CMOS process. The oscillator is based on a Pierce topology adapted for the MEMS resonator that presents a mechanical resonance frequency of ~6 MHz, a relative low quality factor of 100, and a large motional resistance of ~25 M. The MEMS oscillator has a frequency stability of ~1.6 Hz resulting in a mass resolution of ~1 ag (1 ag = 10-18 g in air conditions.

19 March 2010 in Journal of Micromechanics and Microengineering
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Najib KacemNajib Kacem
Najib Kacem
JAJulien Arcamone
Julien Arcamone
FPFrancesc Perez-Murano
Francesc Perez-Murano
SHS Hentz
S Hentz