Patrik Hoffmann

Prof. Dr. Patrik Hoffmann

Swiss Federal Laboratories for Materials Science and Technology Empa, Laboratory for AdvancedMaterials Processing, Feuerwerkerstrasse 39, CH-3602, Thun, Switzerland
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orcid

Research Focus & Metrics

Academic Career Length

34Years (1993-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 September 2004 in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Verified
Journal Article
Closed access
TBT. Bret
T. Bret
IUIvo Utke
Ivo Utke
CGC. Gaillard
C. Gaillard
PHPatrik Hoffmann
Patrik Hoffmann
Focused electron-beam-induced deposition from a copper precursor is shown to allow self-formation of periodic features when the beam is scanned at lateral speeds of the order of the vertical deposition rate. The period of the structures can be tuned by the scan speed. Simultaneous monitoring of the electron-beam-induced sample current and secondary electron signal shows in situ evidence of the phenomenon. The spatial distribution of scattered electrons and the influence of the structure geometry on the deposition yield are discussed. The growth rate decreases with increasing distance from the substrate. This is a growth reduction counterpart to the constant electron flow and induces the periodicity. A semi-empirical model is proposed. The study widens the understanding of the mechanism of focused electron-beam-induced deposition. This understanding will help with the future design of complex three-dimensional nanoarchitectures.

15 December 1993 in Journal of Applied Physics
Verified
Journal Article
Closed access
PHPatrik Hoffmann
Patrik Hoffmann
GAG. Ben Assayag
G. Ben Assayag
JGJ. Gierak
J. Gierak
JFJ. Flicstein
J. Flicstein
MMM. Maar-Stumm
M. Maar-Stumm
HBH. van Den Bergh
H. van Den Bergh
Spin-coated solid films of the gold-cluster compound Dodeca-(triphenylphosphine), hexa(chloro)pentapentacontagold Au55(PPh3)12Cl6 are irradiated with a focused 20-keV Ga+ focused-ion beam. The writing speeds on the substrate were ranging from 50 up to 2000 μm/s. This treatment locally decreases the solubility of the metalorganic precursor layer in CH2Cl2. Removal of the nonirradiated part of the surface layer with this solvent, followed by thermal decomposition of the remaining metalorganic nanostructures, leads to conducting gold lines. The width (150–360 nm) and height (20–80 nm) of these metallic lines depend on the ion dose and the original film height of the gold compound. The possible interactions leading to the fixation are briefly discussed.

1 March 2003 in Thin Solid Films
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Journal Article
Closed access
GBG. Benvenuti
G. Benvenuti
EHE. Halary-Wagner
E. Halary-Wagner
Brioude ArnaudBrioude Arnaud
Brioude Arnaud
PHPatrik Hoffmann
Patrik Hoffmann

16 March 2004 in Journal of Crystal Growth
Verified
Journal Article
Closed access
FCF. Cicoira
F. Cicoira
Klaus LeiferKlaus Leifer
Klaus Leifer
PHPatrik Hoffmann
Patrik Hoffmann
IUIvo Utke
Ivo Utke
BDB. Dwir
B. Dwir
PDP. Doppelt
P. Doppelt