Population growth significantly expanding the boundaries of residential areas and living standards for humankind results in a tremendous increase in energy consumption. Unlike fossil fuels, which are found only in a few sites and non-renewable sources, solar energy is renewable and freely available in every part of the world. A dye-sensitized solar cell (DSSC) is a suitable electrochemical device to harness solar energy to produce power and is advantageous for its simplicity and inexpensive cost. Variations in photo-electrodes micro/nanostructure shape, doping, size, and crystal phase can improve the DSSCs performance by enhancing dye loading, improved light scattering ability, and/or faster electron transit and longer electron lifetime. The high yielding techniques for producing diverse morphologies for nanoparticles with appropriate band gaps might thus be considered another feasible strategy for improving cell performance. The impact of influencing parameters on photovoltaic characteristics of photo-anode for DSSC application is investigated in this review article. The descriptions are presented by compiling a list of relevant literature reports.

In this work, a Lookup table based verilog-A model is employed in cadence to evaluate the performance of the chain of inverters and 6-T SRAM cell based on double gate Tunnel-field-effect transistor (DGTFET). In order to drive large capacitance with fixed number of inverters stages with constant width of N type DGTFET (W _n ), it is found that the time delay performance of the inverter chain depends on the ratio of width of P type DGTFET of nth stage (Wp _n ) to width of P type DGTFET of n-1th stage (Wp _n−1 ). Simulation results investigated that the time delay is minimized to 0.265 ns for Wp _n /Wp _n−1 = 3. The impact of cell ratio (CR) and pull up ratio (PR) on the read stability and write ability of 6-T SRAM cell are investigated by using N curve simulations. It is observed that, increasing CR and PR strengthens the read stability and degrades the write ability of 6-T SRAM cell.