Solution-processed perovskite quantum dots (QDs) have been intensively researched as next-generation photocatalysts owing to their outstanding optical properties. Even though the intrinsic physical properties of perovskite QDs have been significantly improved, the chemical stability of these materials remains questionable. Their low long-term chemical stability limits their commercial applicability in photocatalysis. In this study, we investigated the photodegradation mechanisms of perovskite QDs and their hybrids via photoluminescence (PL) by varying the excitation power and the ultraviolet (UV) exposure power. Defects in perovskite QDs and the interface between the perovskite QD and the co-catalyst influence the photo-stability of perovskite QDs. Consequently, we designed a stable perovskite QD film via an in-situ cross-linking reaction with amine-based silane materials. The surface ligand comprising 2,6-bis(N-pyrazolyl)pyridine nickel(II) bromide (Ni(ppy)) and 5-hexynoic acid improved the interface between the Ni co-catalyst and the perovskite QD. Then, ultrathin SiO₂ was fabricated using 3-aminopropyltriethoxy silane (APTES) to harness the strong surface binding energy of the amine functional group of APTES with the perovskite QDs. The Ni co-catalyst content was further increased through Ni doping during purification using a short surface ligand (3-butynoic acid). As a result, stable perovskite QDs with rapid charge separation were successfully fabricated. Time-correlated single photon counting (TCSPC) PL study demonstrated that the modified perovskite QD film exhibited slow photodegradation owing to defect passivation and the enhanced interface between the Ni co-catalyst and the perovskite QD. This interface impeded the generation of hot carriers, which are a critical factor in photodegradation. Finally, a stable red perovskite QD was synthesized by applying the same strategy and the mixture between red and green QD/Ni(ppy)/SiO₂ displayed an CO₂ reduction capacity for CO (0.56 µmol/(g∙h)).

We developed solution-processed hybrid photodetectors with a poly (9-vinylcarbazole)/zinc oxide nanoparticle photoactive layer and a poly (vinylidene fluoride-co-trifluoroethylene) ferroelectric copolymer buffer layer on flexible plastic substrates. The presence of a ferroelectric-poling interface layer significantly enhanced the charge transfer and responsivity of the photodetectors under ultraviolet (UV, 365 nm) light exposure. The responsivity of the device reached 250 mA/W at a reverse bias of 5 V and incident light intensity of 27.5 μW/cm². This responsivity was four times higher than that of a device without the ferroelectric copolymer layer (64 mA/W) under the same conditions. The response time of the device to incident UV light also improved from 322 to 34 ms with the addition of the ferroelectric copolymer layer. In addition, the flexible device exhibited a stable performance in an air environment up to a maximum strain of 0.3 under bending stress. Finally, a UV-light-responsive memory device was successfully fabricated by using the developed hybrid photodetector and liquid crystals. This device showed a colour change from white to black upon UV illumination, and the on-state of the device was maintained for 30 s without light exposure owing to the polarization of poly (vinylidene fluoride-co-trifluoroethylene).