While the shape-dependent quantum confinement (QC) effect in anisotropic semiconductor nanocrystals has been extensively studied, the QC in facet-specified polyhedral quantum dots (QDs) remains underexplored. Recently, tetrahedral nanocrystals have gained prominence in III-V nanocrystal synthesis. In our study, we successfully synthesized well-faceted tetrahedral InAs QDs with a first excitonic absorption extending up to 1700 nm. We observed an unconventional sizing curve, indicating weaker confinement than for equivalently volumed spherical QDs. The (111) surface states of InAs QDs persist at the conduction band minimum state even after ligand passivation with a significantly reduced band gap, which places tetrahedral QDs at lower energies in the sizing curve. Consequently, films composed of tetrahedral QDs demonstrate an extended photoresponse into the short-wave infrared region, compared to isovolume spherical QD films.

InAs semiconductor nanocrystals (NCs) exhibit intriguing electrical/optoelectronic properties suitable for next-generation electronic devices. Although there is a need for both n - and p -type semiconductors in such devices, InAs NCs typically exhibit only n -type characteristics. Here, we report InAs NCs with controlled semiconductor polarity. Both p - and n -type InAs NCs can be achieved from the same indium chloride and aminoarsine precursors but by using two different reducing agents, diethylzinc for p -type and diisobutylaluminum hydride for n -type NCs, respectively. This is the first instance of semiconductor polarity control achieved at the synthesis level for InAs NCs and the entire semiconductor nanocrystal systems. Comparable field-effective mobilities for holes (3.3 × 10 ⁻³ cm ² /V·s) and electrons (3.9 × 10 ⁻³ cm ² /V·s) are achieved from the respective NC films. The mobility values allow the successful fabrication of complementary logic circuits, including NOT, NOR, and NAND comprising photopatterned p - and n -channels based on InAs NCs.